锗纳米晶的可控低温原位生长及其机理研究

项目名称： 锗纳米晶的可控低温原位生长及其机理研究

项目编号： No.61204004

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 张博

作者单位： 电子科技大学

项目金额： 28万元

中文摘要： 锗纳米晶不仅具有无毒，储量丰富，与硅生产工艺相兼容等优点，其较低的生长温度降低了相关材料和器件的制备工艺复杂度，从而使其能够被应用于低成本衬底或柔性衬底。因此，锗纳米晶在低成本纳米器件和柔性纳米器件领域具有广阔的应用前景。本项目旨在探索利用可控低温原位生长技术在柔性衬底上制备锗纳米晶薄膜，阐明锗纳米晶的低温生长机理，揭示原位生长锗纳米晶中载流子产生和电荷输送的机制，建立对锗纳米晶薄膜进行掺杂改性的方法。在衬底加热原位生长法的基础上，本项目将通过采用紫外光辅助原位生长法和激光后退火原位生长法实现在更低的工艺温度下进行锗纳米晶的可控生长，并尝试采用以上技术在柔性衬底上制备光电器件，以验证锗纳米晶薄膜的相关性能。该项目的研究成功，为锗纳米晶及相关光电器件的制备提供了实验和理论基础，对推动我国的新型低成本柔性纳米光电器件研究跨入国际先进行列具有重大的现实意义。

中文关键词： 锗纳米晶；原位生长；低温；可控；柔性衬底

英文摘要： Ge nanocrystals (Ge-ncs) have advantages of being non-toxic, abundant and compatible with large area silicon process. The lower growth temperature of Ge-ncs reduces the manufacturing complexity and thereby makes it suitable for the fabrication on low cost or flexible substrates. Therefore, Ge-ncs are very promising as a candidate for applications of low cost nano-devices and flexible nano-devices. In this project, we will investigate the fabrication of Ge-ncs thin film on flexible substrates using controllable low temperature in situ growth techniques and illustrate its underlying mechanism. Meanwhile, the mechanisms of free carrier generation and charge transport of in situ grown Ge-ncs will also be revealed, and a doping method will be established for the Ge-ncs thin film. Based on the in situ growth method using substrate heating, two novel approaches, ultra-violet assisted in situ growth and in situ growth with laser post-annealing, will be developed in order to realize the controllable growth of Ge-ncs at further lower temperature. In addition, optoelectronic devices will be fabricated on flexible substrates using above techniques for the purpose of verifying relative properties of Ge-ncs thin film. The completion of this project will establish experimental and theoretical foundations for the fabrication of

英文关键词： Ge nanocrystals；in situ growth；low temperature；controllable；flexible substrate