基于侧向收集模式的平面型InGaAs探测器新结构研究

项目名称： 基于侧向收集模式的平面型InGaAs探测器新结构研究

项目编号： No.61505090

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 无线电电子学、电信技术

项目作者： 邓洪海

作者单位： 南通大学

项目金额： 20万元

中文摘要： 空间遥感领域对高性能的平面型InGaAs近红外探测器有迫切的需求，本课题结合平面型InP/InGaAs/InP探测器光敏元易扩大和串音难抑制的特点，创新性地提出了一种基于侧向收集模式的InGaAs探测器新结构。本项目以载流子输运理论为基础,通过在光敏元表面设计载流子侧向收集区和扩散阻挡区以减少扩散损伤，并通过构建物理模型和表征新结构探测器的光电特性，获得精确设计参数，实现光敏元的均匀响应，最终发展一种降低暗电流和盲元率、抑制光敏元扩大和串音的器件设计方法。研究光生载流子扩散和耗尽区电场分布的界面特性，揭示少子输运与新结构探测器光电性能之间的微观机制，实现载流子侧向收集结构与探测器工艺的稳定集成，最终从机理上降低器件暗电流、抑制光敏元扩大和串音、降低盲元率，为高性能成像和光谱探测奠定研究基础，对推动我国近红外焦平面技术的发展具有重要意义。

中文关键词： InGaAs；载流子侧向收集效应；红外探测器；暗电流；串音

英文摘要： There is an urgent demand of high-performance planar type InGaAs near infrared detector for remote sensing field. According to the easy extension of the photo-sensitive area and the difficult suppressing of the optical cross-talk in the planar type detectors, this project proposes a new InGaAs detector structure based on the lateral collection model innovatively. By the design of the lateral collection region and the diffusion barrier region in the photo-sensitive area surface to reduce diffusion damage, and by establishing the physical models and measuring the photoelectric characteristics to obtain the accurate design parameters to realize uniform photoresponse, a new device design method of reducing dark current and the ratio of dead pixels, and suppressing the extension of photo-sensitive area and the optical cross-talk is developed combined with the carriers transport theory. Research work will take place in the field of interface characteristics of photogenerated carriers diffusion and the electric field distribution in the depletion region. This research will reveal the mechanism of correlation between minority carriers transport and photoelectric characteristics of the new device to reach the process integration. Finally the reduction of the dark current, the ratio of dead pixels and the suppression of the extension of photo-sensitive area and the optical cross-talk from the mechanism of the device will be achieved. The research will lay good foundation for high-performance imaging and spectroscopy detection, which has important significance for the promotion of the development of near-infrared FPA technology.

英文关键词： InGaAs;Lateral collection effect of carriers;Infrared detector;Dark current;Cross-talk