苛刻环境大容量MLC型NAND FLASH转换层新机制与算法

项目名称： 苛刻环境大容量MLC型NAND FLASH转换层新机制与算法

项目编号： No.61272103

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 自动化技术、计算机技术

项目作者： 关永

作者单位： 首都师范大学

项目金额： 80万元

中文摘要： 苛刻环境下大容量高速存储系统蕴藏着巨大的潜在应用价值。由于苛刻环境存在热应力、振动、冲击、真空、电磁辐射等恶劣条件，传统的机电结构存储设备以及磁性存储系统已经无法可靠工作，因此，大容量高速固态存储系统已成为众多应用的核心支撑技术。为了克服多层储存单元型固态存储系统自身只能进行顺序写入和部分编程的局限，提高大容量固态存储系统的响应速度，本研究拟通过建立转换层新机制与算法的方法，构建多层储存单元型固态存储系统地址映射模型、垃圾回收模型、耗损平衡模型；根据双门限检测和可中断垃圾回收机制，减少有效数据页的拷贝操作，确保系统平均响应时间较短，并尽可能的平衡每个数据块的擦除次数，延长芯片的使用寿命，从根本上解决传统闪存转换层在多层储存单元型固态存储系统上应用失效或者效率低下的问题，实现存储系统在较小的内存开销下获得快速响应能力。最后，我们将通过实验和理论分析的手段评价和比较所设计机制与算法的性能。

中文关键词： 苛刻环境；MLC型NAND FLASH；非易失性存储器；转换层；算法

英文摘要： In harsh environment, there is tremendous potential value for large-capacity high-speed storage systems. Due to adverse conditions such as thermal stress、vibration、impact、vacuum、electromagnetic radiation in harsh environment, traditional storage devices which are mechanical and electrical structure and magnetic storage system have been unable to work reliably, Therefore, large-capacity high-speed solid-state storage system have been the core support technology of many applications. In order to overcome MLC NAND Flash's limitations which can only be written sequentially and programmed partially, improve the response speed of the high-capacity solid-state storage systems, this study builds solid-state storage system of multilayer storage unit address mapping model, garbage collection model and the loss of balance model by the establishment of the conversion layer mechanisms and algorithms; According to the double threshold detection and interrupt garbage collection mechanism, we can reduce the effective data page copy operation, ensure system average response time is short, balance each block erasing time as far as possible, extend the lifetime of the chip, work out the problem of the traditional flash translation layer in the MLC NAND Flash unit on the solid-state storage system application failure or inefficient

英文关键词： Ruggedly Environment；MLC NAND Flash；NVMS；FTL；algorithm