基于高空间分辨电子显微学In2-xGaxO3(ZnO)m缺陷分析

项目名称： 基于高空间分辨电子显微学In2-xGaxO3(ZnO)m缺陷分析

项目编号： No.11504097

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 数理科学和化学

项目作者： 武立立

作者单位： 黑龙江科技大学

项目金额： 21万元

中文摘要： In2-xGaxO3(ZnO)m作为透明场效应晶体管沟道材料在平板显示、传感器等众多领域具有广泛应用。研究氧空位在其晶体结构中的空间分布及对传导电荷的贡献，是运用缺陷工程手段对氧空位进行调控，从而获得高性能晶体管沟道材料的重要前提。项目以纳米带(线)为研究对象，基于高空间分辨电子显微学，结合理论计算和性能测试对材料的氧空位晶体学模型展开系统分析，揭示微观结构与电学性质的对应关系。通过高分辨透射电子显微图像观察微观结构和缺陷，空间对应地测试不同位置各元素的能损近边精细结构，分析氧空位的分布和电离状态；制作单根纳米线(带)的场效应晶体管，通过分析电导率和氧逸度的对应关系，提出氧空位晶体学模型；运用第一性原理计算电子结构，依据分波态密度标定电子能量损失谱中的带间跃迁，结合电学性能测试阐明氧空位对电荷传导的贡献，为从根本上解决应用技术瓶颈，形成量产规模提供科学依据。

中文关键词： 半导体；缺陷分析；氧空位；电子显微学；电子结构

英文摘要： In2-xGaxO3(ZnO)m has tremendous application potential as a channel material for field-effect transistors in the flat panel display, field emission sensors, and other fields. Analysis on the spatial distribution of oxygen vacancy and its contribution to the carrier is important for the oxygen vacancy tuning in In2-xGaxO3(ZnO)m and the acquisition of high quality channel materials for field-effect transistors. In this project, In2-xGaxO3(ZnO)m nanowires and nanobelts are systematically studied employing the high spatial resolution analytical electron microscopy, theoretic calculation and properties characterization. This project aims at investigating the relationship among the microstructure and electrical properties of In2-xGaxO3(ZnO)m on the atomic scale. Through high resolution transmission electron microscope images and corresponding electron energy loss near edge structure of each element in different section, the spatial distribution and ionized states of oxygen vacancy in the crystal structure of are In2-xGaxO3(ZnO)m investigated. Field effect transistors based on individual In2-xGaxO3(ZnO)m nanowire (and nanobelt) are fabricate, and the relationship between electrical conductivity and oxygen fugacity is analyzed. Based on the information above, the crystallographic structural model of In2-xGaxO3(ZnO)m is built. Based on the first principles, the partial density of states of In2-xGaxO3(ZnO)m with oxygen vacancy is calculated to analyze the interband transitions in its electron energy loss spectrum. Combined with the electrical performance of In2-xGaxO3(ZnO)m field effect transistors, how oxygen vacancy in the crystal structure of In2-xGaxO3(ZnO)m contributes to carrier is illuminated. These results could provide the theoretical instruction and the experimental foundation for the solution of technical bottleneck of In2-xGaxO3(ZnO)m.

英文关键词： Semiconductor;Defect analysis;Oxygen vacancy;Electron microscopy;Electronic structure