LTCC多层基片集成波导谐振腔内部应力机理研究

项目名称： LTCC多层基片集成波导谐振腔内部应力机理研究

项目编号： No.61301052

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 徐自强

作者单位： 电子科技大学

项目金额： 28万元

中文摘要： 基于低温共烧陶瓷（LTCC）的多层基片集成波导（SIW）滤波器具有小体积、高Q、大功率容量等优点，为目前滤波器研究的热点，在相关的研究中，国内外学者的研究偏重于电路结构和理论层面，而对LTCC加工中由于多层陶瓷及金属/陶瓷异质结构所产生的内部失配应力，使得SIW谐振腔出现频偏、损耗增大、Q值和可靠性降低等问题，目前仍缺乏基于物理机理的解释和模型分析，这也成为制约其发展的关键因素之一。为此，本项目针对多层SIW谐振腔加工中形成应力的大小、分布特性及产生的相关效应，拟从理论上建立腔体晶粒成瓷和金属/陶瓷异质结构的多尺度应力模型，分析应力与陶瓷成瓷性、异质界面匹配性、腔体微波性能的内在联系，揭示工艺参数对应力的影响规律，提出内部应力匹配的改善方法。最后，通过实验检验改善方法和优化应力模型，完善应力起源分析，最终获得适用于多层SIW谐振腔的应力形成机制的深刻理解，支持该类器件的研制和应用。

中文关键词： 低温共烧陶瓷；多层结构；基片集成波导；应力机理；异质结构

英文摘要： Substrate integrated waveguide (SIW) filters based on low-temperature co-fired ceramic (LTCC) technology have the features of compact sizes, high quality factor, and high power capability, which are attracting much attention recently. Researchers emphasize particularly on circuit structures and theories of SIW filters in relating research. However, mismatch inner stresses from interior ceramic and different conductor/ceramic structure of SIW cavities during the LTCC process, which can cause their frequency shift, discrepancy of insertion loss, and degradation of quality factor and reliability, are still lacking pertinent physical mechanism model analysis. It is yet another key factor influencing application and development in SIW filters. Therefore, this project focuses on stress magnitude, distributing and influence of SIW resonant cavity, establishes theoretically multiscale stress model of interior ceramic and different conductor/ceramic structure according with actual LTCC process, analyzes mutual connection between the stress and inner ceramic, interface matching, as well as microwave characteristic, exhibits the impact mechanism from LTCC process parameters to the stress, and proposes the method to improve the inner mismatching stress. Finally, by verifying improved methods and modifying the stress models

英文关键词： Low-temperature co-fired ceramic (LTCC)；Multilayer structure；Substrate integrated waveguide (SIW)；Stress mechanism；Different structure