非晶InGaZnO薄膜晶体管环境稳定性机理的研究

项目名称： 非晶InGaZnO薄膜晶体管环境稳定性机理的研究

项目编号： No.61474075

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 董承远

作者单位： 上海交通大学

项目金额： 76万元

中文摘要： 非晶InGaZnO薄膜晶体管(a-IGZO TFT)可望成为下一代平板显示的有源驱动电子器件,但目前对其环境稳定性机理尚不清楚，这成为了制约其大规模生产的不利因素之一。本项目将采用实验测试和理论建模仿真相结合的方法针对a-IGZO TFT在不同环境温度、气氛和光照条件下的稳定性机理开展研究，分析环境条件对器件操作特性和电压偏置稳定特性的影响，探索不同环境条件对a-IGZO TFT有源层和界面特性影响的基本规律；建立能够有效描述a-IGZO TFT环境稳定性的物理模型并利用该模型研究影响器件环境稳定性的关键因素。最后根据上述研究结果提出并验证能够有效改善a-IGZO TFT环境稳定性的制备工艺手段和器件设计方法。本项目的实施一方面将极大加深对a-IGZO TFT这一新型半导体器件电学特性和工作机理的认识，另一方面将为其实际应用打下坚实的实验和理论基础。

中文关键词： 薄膜晶体管；氧化物半导体；平板显示

英文摘要： Amorphous InGaZnO thin film transistors (a-IGZO TFTs) are considered to be the electronic addressing devices for next-generation flat panel displays. However, the stability mechanism of a-IGZO TFTs is still unclear, which prevents this technology from being put into mass production. In this project, the stability mechanism of a-IGZO TFTs under various temperatures, atmosphere and photo-illumination are investigated with experimental measurement and theoretical modeling combined, analyzing electrical performance and bias-stress effect of a-IGZO TFTs under various environmental conditions as well as discovering the influence of ambient conditions on the properties of the active layer and interface. Moreover, a physical model is built to effectively describe the ambient stability of a-IGZO TFTs, with which the related key parameters are studied. Finally, some useful production skills and design methods are proposed and verified to improve the ambient stability of a-IGZO TFTs based on the above research results. All in all, the application of this project may not only further our understanding of electrical properties and working mechanism of the novel semiconductor devices, i.e. a-IGZO TFTs but also strongly build experimental and theoretical basis of their actual applications.

英文关键词： Thin Film Transistor;Oxide Semiconductor;Flat Panel Display