化合物器件不同能量质子位移损伤因子与非电离能损相关性研究

项目名称： 化合物器件不同能量质子位移损伤因子与非电离能损相关性研究

项目编号： No.11475256

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 数理科学和化学

项目作者： 于庆奎

作者单位： 中国空间技术研究院

项目金额： 80万元

中文摘要： 新型化合物器件具有极高的光电信号探测和转换性能，已成为航天器选用的关键器件。在空间环境中，高能质子产生的位移损伤效应会引起器件性能退化，甚至功能失效。空间质子能量范围为0.1~400MeV。不同能量质子产生位移损伤大小不同。用非电离能损(NIEL)表征质子产生位移损伤水平，用位移损伤因子表征位移损伤引起器件参数退化大小。对化合物器件进行空间质子位移损伤等效评估，需要不同能量质子非电离能损与器件位移损伤因子的函数关系。针对新型化合物器件的非电离能损计算模型不完善和非电离能损与器件位移损伤因子的相关性研究不足，以GaAs、HgCdTe等化合物器件为对象，分析质子产生位移损伤过程，考虑质子能量传输和转换的各种方式，借助解析法和蒙特卡罗方法，对化合物器件非电离能损计算模型进行补充完善。进行不同能量质子辐照试验，分析研究器件位移损伤因子随质子能量的变化情况。基于改进的非电离能损计算模型和位移损伤因子试验结果，研究建立不同能量质子非电离能损与器件位移损伤因子的函数关系。

中文关键词： 离子辐照；辐照损伤；辐照效应；损伤机理；空间辐射

英文摘要： Compound semiconductor device has a unique photo-electric conversion performance. It has become a key device on spacecraft. Due to the displacement damage effect caused by high energy proton in space, the performance of compound semiconductor device will be degraded. Protons in space are continuous energy spectrum. The energy is range of 0.1 ~ 400MeV. The amount of displacement damage on device produced by different energy protons is not the same. In order to perform equivalent evaluating the displacement damage caused by continuous spectrum of protons, it is need to build the relationships of displacement damage caused by different energy proton. The amount of displacement damage on semiconductor material caused by proton is characterize by non-ionizing energy loss. The level of performance degradation on semiconductor device caused by proton is characterized by displacement damage factor. For the emerging compound semiconductor devices, the non- ionizing energy loss calculation model is lack of study. The correlation between non- ionizing energy loss and device displacement damage factor is lack of research. The typical GaAs, HgCdTe devices are chosen as samples. The process of proton collision target lattice atom producing displacement damage is carefully analyzed. A variety ways of proton energy transfer are studied. The model to calculate non-ionizing energy loss of material using analytical method and Monte Carlo method was modified. The experiment of compounds devices irradiated by proton is performed. The device displacement damage factor is measured and analyzed on different energy proton irradiation. The correlation of non-ionizing energy loss and device displacement damage factor as a function of proton energy is established.

英文关键词： compound device;displacement damage;non-ionizing energy loss;proton;radiation effect