基于2,5-二芳基二噻吩并[2,3-b;3',2'-d]噻吩的有机场效应晶体管的研究

项目名称： 基于2,5-二芳基二噻吩并[2,3-b;3',2'-d]噻吩的有机场效应晶体管的研究

项目编号： No.50803015

项目类型： 青年科学基金项目

立项/批准年度： 2009

项目学科： 金属学与金属工艺

项目作者： 史建武

作者单位： 河南大学

项目金额： 22万元

中文摘要： 本项目旨在研究α20301;含有不同芳基以及不同方位芳基封端对二噻吩并[2,3-b,3,2'-d]噻吩有机场效应晶体管性能的影响，考察取代基不同对材料的能级结构和薄膜生长习性的影响，并根据材料的场效应特性研究取代基不同对器件迁移率和稳定性的影响，揭示材料的化学结构与材料的能级结构、器件的迁移率和稳定性之间的内在联系和规律，并研究载流子在有机半导体中的传输机制。希望该项目的实施能够为探寻稳定的高迁移率有机半导体材料提供理论依据与应用素材。

中文关键词： 二噻吩并[2;3-b;3'2'-d]噻吩；有机场效应晶体管；迁移率；分子间作用力；能级

英文摘要： The synthesis and applicatioin in organic photoelectronic devices of fused thiophene derivatives have received more attention. Our research work is focused on beta-fused thiophene (dithieno [2, 3-b:3',2'-d]thiophene).Our work can be separated into: 1)the synthesis of ten DTT derivatives; 2)the effect of end-capping groups on the degradation and melting temperature; 3)the changing of intermolecular interaction with different way of subsitution; 4)the effect of end-capping groups on the optical properties and energy levels; 5) the derivation of topographical images of materials films; 6) the effect of materials structures on the properties of organic filed-effect transistors. It was found that: 1)the degradatin temperature increases with the increasing of molecular weight, but the introduction of double bonds makes the degradation temperature decreasing; 2)the changing of end-capping groups only affects the energy gaps, while it does not affect the HOMO levels; 3) the translation of intermolecular interaction from S-S to S-C, S-pi,and S-pi with S-S is caused by the changing of substitution way; 4) five derivatives present high mobility higher than 0.1 cm2/Vs, and highest mobility was obtained in styryl den-capped derivatives, and the threshold voltage increases with the energy gap increasing.

英文关键词： dithieno [2; 3-b:3';2'-d]thiophene; organic field-effect transistors; mobility; intermolecular interaction; energy level