基于表面势的多晶硅TFT电路仿真模型的研究与验证

项目名称： 基于表面势的多晶硅TFT电路仿真模型的研究与验证

项目编号： No.61204100

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 邓婉玲

作者单位： 暨南大学

项目金额： 22万元

中文摘要： 设计AMLCD 和AMOLED 像素驱动等电路需要准确的多晶硅TFT 模型，因此，合理的模型对集成电路产业具有深远意义。基于表面势的模型是半导体器件建模的先进技术，但应用于多晶硅TFT漏电流模型的研究上，存在表面势解析计算的技术瓶颈。本项目在前期多晶硅TFT建模工作基础上，进一步深入研究的内容包括：其一，综合考虑指数带尾态和高斯深能态结合的完整晶界陷阱态分布规律，以及与薄膜厚度相关的前和背表面电势的影响，利用Lambert W 函数解决表面势的解析求解问题，该算法可实现电路仿真器计算效率的提高；其二，基于表面势，建立统一电流模型，并考虑器件的特殊物理效应；其三，实现模型的电路仿真嵌入，建立一套准确高效的参数提取流程；其四，采用数值模拟、TCAD器件仿真、实验数据拟合及电路仿真器模拟的方法验证模型。本项目构建的模型与现有多晶硅TFT模型比较，具有物理意义明确、普适等特点，可应用于电路仿真器。

中文关键词： 多晶硅薄膜晶体管；模型；表面势；；

英文摘要： To design pixel driving circuits for AMLCD and AMOLED, it needs accurate polycrystalline TFT models. Therefore, reasonable models of polycrystalline TFTs suitable for circuit simulators are significant for the integrated circuit industries. Surface-potential-based models are advanced technology for semiconductor devices modeling; however, analytical surface potential calculation brings the main obstacle in the surface-potential-based drain current model for polycrystalline TFTs. Based on the previous research results, this project is planned to further study the following issues. Firstly, accounting for the complete energy distribution of trap state density in grain boundaries, i.e., both exponential band-tail states and Gaussian deep states, and including the front- and back- surface potentials related to the thin film thickness, an analytical calculation to surface potential is obtained by using Lambert W function. The proposed solution can greatly improve the calculation efficiency of circuit simulators. Secondly, based on surface potential, a unified drain current model is established, taking several unique effects of polycrystalline TFTs into account. Thirdly, the model is implemented into circuit simulator, and an accurate parameter extraction is proposed. Fourthly, the model is verified by comparisons wit

英文关键词： polycrystalline silicon TFT；model；surface potential；；