高可控GaN基纳米线及其异质核壳结构的生长与性能研究

项目名称： 高可控GaN基纳米线及其异质核壳结构的生长与性能研究

项目编号： No.11474105

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 数理科学和化学

项目作者： 李述体

作者单位： 华南师范大学

项目金额： 89万元

中文摘要： GaN材料具有诸多优良性质，使其在纳米器件应用方面有着独特的优势。制备出性能优良、尺寸和密度可控的GaN基纳米线是研制高性能纳米器件的关键。本项目采用湿法化学刻蚀技术，利用GaN材料在硅不同晶面的异向外延特性，提出一种免催化剂在图形Si衬底上生长GaN基纳米线的方法。在此基础上，开展GaN基纳米线光泵浦激光特性研究，以及GaN基纳米敏感器件响应性能的影响因素及机理研究。该制备方法在保证晶体质量的前提下，可实现对纳米线生长尺寸、密度、掺杂、结构等的高可控性，并利于生长界面陡峭的异质结核壳结构，从物理特性和化学特性同时实现GaN基纳米线的调控。项目还将研究压电效应对GaN基纳米线体系中载流子的产生和输运特性的调控机理，揭示载流子浓度和迁移率对GaN基纳米线敏感器件响应特性作用机理，发现GaN纳米线的潜在应用性能。

中文关键词： 半导体纳米材料；人工微结构材料；氮化镓基半导体

英文摘要： GaN has became a promising candidate for applications of nanodevices with its excellent performance. It is of key importance to synthetize high-quality GaN-based nanowire with controlled size and spacial density for developing high-performance nanodevices. Taking into account this fact, the applicant proposes a rational method for the synthesis of catalyst-free GaN-based nanowire on patterned silicon(Si) substrate, which combined the technology of wet chemical etching and the epitaxial relationship between GaN and different facet of Si. Then we also explored the optically pumped properties of the as-synthesized GaN-based nanowire, and the factors and mechanism of response performance of GaN nanowire based sensitive device, such as ultraviolet detector and gas sensor, were studied. Under the premise of ensuring crystal quality, the size, density, doping and structure of GaN-based nanowire could be highly controlled by this synthesis way, what is more, it facilitates to design and growth high quality heterojunction core-shell nanowire with sharp interface. So, the performance of as-synthesized nanowire could be well controlled by regulating its physical properties and chemical properties. In this project, the regulation mechanism for the generation and transport properties of carriers in the GaN-based nanowire, which were caused by the piezoelectric effect, will be fully explored. And we will also further research the impact mechanism of carrier concentration and mobility in GaN nanowire for the sensitive devices. This will open up a new way to explor the potential applications of GaN-based nanowire.

英文关键词： semiconductor nanowire;artificial microstructure materials;GaN-based semiconductor