单晶氧化锡外延薄膜的制备及性能研究

项目名称： 单晶氧化锡外延薄膜的制备及性能研究

项目编号： No.50872073

项目类型： 面上项目

立项/批准年度： 2009

项目学科： 金属学与金属工艺

项目作者： 马瑾

作者单位： 山东大学

项目金额： 35万元

中文摘要： 研究制备性能优良的单晶氧化锡(SnO2)外延薄膜将为该材料在透明电子器件、紫外光发光器件、紫外探测器等领域的实际应用奠定基础。采用MOCVD方法分别在YSZ、6H-SiC、蓝宝石和TiO2等单晶衬底上外延生长出氧化锡半导体薄膜材料。系统地研究了不同单晶衬底包括不同晶面上氧化锡单晶薄膜生长的晶格适配和外延机理及最佳制备工艺参数；研究了氧化锡薄膜的晶格微结构、光电性质和光致发光特性及发光机制。在YSZ(120)衬底上制备出高质量的具有铌铁矿结构C-SnO2(120) 无畴单晶薄膜，在YSZ(100) 衬底上生长C-SnO2(100) 薄膜内部具有两重畴结构，研究了相应的外延机理和外延关系；分别在蓝宝石r、a和m面衬底上制备出氧化锡外延薄膜，研究了薄膜与衬底的外延关系、机理和发光机制；在TiO2(001)衬底上制备出氧化锡单晶外延薄膜，确定了样品SnO2(001)与衬底TiO2(001)的外延关系；在6H-SiC (0001)面衬底上成功生长出SnO2外延薄膜。另外研究了镓、铟、锌和锑掺杂氧化锡薄膜的微观结构、光电性质和光致发光特性及发光机制，以及制备条件对薄膜性质的影响。

中文关键词： 氧化锡；单晶薄膜；外延机理；结构；性质

英文摘要： Research for the high quality single crystalline SnO2 epitaxial films roundly is a base for this materials used in transparent electrical devices, ultra-violet light luminescence devices, UV light detector etc. Single crystalline SnO2 epitaxial films have been prepared on YSZ(Yt doped-ZrO2), 6H-SiC, αl2O3 and TiO2 single crystalline substrates by Metal-organic chemical vapour deposition (MOCVD) method. Crystal lattice match and epitaxial mechanism for the SnO2 films growth on the different substrates, and the optimum processing parameter for preparing single crystalline SnO2 films have been investigated. Crystal lattice micro-structure, optical and electrical properties, photoluminescence properties and photoluminescence mechanism for the obtained SnO2 films have been also studied by the numbers. High quality single crystalline orthorhombic columbite C-SnO2(120) films without any domain structure were deposited on YSZ(120) substrates and the SnO2 films deposited on YSZ(100) substrates were C-SnO2(100) epitaxial films with twinning structure, the corresponding epitaxial mechanism and epitaxial relationship were analysed. Epitaxial SnO2 films have been prepared on r、a and m-plane αl2O3 substrates respectively. The epitaxial relationship, epitaxial mechanism and photoluminescence mechanism were researched. Single crystalline SnO2 film have been prepared on TiO2(001) substrates and the epitaxial relationship was confirmed. Epitaxial SnO2 film have been prepared on 6H-SiC (0001) substrates. In addition, the crystal structure, photoelectricity properties, photoluminescence properties and luminescence mechanism as well as the technologic parameter for the Ga, In, Zn and Sb doped SnO2 films have been also studied.

英文关键词： SnO2; Single crystalline films; epitaxial mechanism; Structure; properties