基于光子晶体异构微腔的硅基电致发光器件基础研究

项目名称： 基于光子晶体异构微腔的硅基电致发光器件基础研究

项目编号： No.61205044

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 王玥

作者单位： 中国科学院半导体研究所

项目金额： 27万元

中文摘要： 硅基发光器件是硅基光电子集成技术中的关键，如何实现高效的硅基发光一直是科学与工程学界的研究热点。本项目尝试在SOI衬底上设计、制作基于光子晶体异构微腔的硅基电致发光器件。利用基于光子晶体模式隙（mode-gap）效应的新型异构微腔提高掺铒硅材料的发光效率，构建p-Er:Si-n式电致发光结构，研制出具备高Q值、小模式体积、1550nm单模谐振波长及高发光增强因子的硅基发光芯片样品。主要研究内容包括新型光子晶体异构微腔结构的建模及特性分析，高质量SOI基掺铒硅材料制备及性能优化、电注入结构设计及优化，高精度光子晶体异构微腔及电致发光器件制作工艺设计与优化，器件电致发光特性测试及物理机制分析等。该技术的突破必将促进硅基光电子集成的高速发展，并在光互连、光通信等领域发挥其巨大应用潜力，对我国信息产业的发展具有重大意义。

中文关键词： 光子晶体；异构微腔；光致发光；电致发光；掺铒硅

英文摘要： Si-based light-emitting device is the key technology of the Si-based optoelectronic integration, and how to realize high-efficiency Si-based luminescence has always been the research hotspot in the science and engineering field. This project attempts to design and fabricate the Si-based electroluminescent devices based on photonic crystal heterostructre microcavity on SOI substrate. We wants to improve the luminous efficiency of the Er-doped Si material by the new heterostructure microcavity based on the photonic crystal mode-gap effect, build p-Er:Si-n electroluminescent structure, and develope Si-based light-emitting chip sample with high Q-value, low mode volume, 1550nm single-mode resonant wavelength, and high luminous enhancement factor. The research includes modeling and characteristic analysis of the novel photonic crystal heterostructure microcavity, preparation of high quality SOI-based Er-doped Si material, design and optimization of electrically-injected structure, manufacture and optimization of high-accuracy photonic crystal heterostructure microcavity and electroluminescent device, performance and physical mechanism analysis of electroluminescence, and so on. The breakthrough in this technology will promote the rapid development of Si-based optoelectronic integration, and take advantage of its h

英文关键词： Photonic crystal；Heterostructure microcavity；Photoluminescence；Electroluminescence；Er-doped Si