金属氧化物薄膜晶体管稳定性机理的研究

项目名称： 金属氧化物薄膜晶体管稳定性机理的研究

项目编号： No.61204087

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 兰林锋

作者单位： 华南理工大学

项目金额： 24万元

中文摘要： 基于金属氧化物（Metal-Oxide，简称MO，如ZnO、IGZO等）的薄膜晶体管（TFT）具有以其迁移率高、电学均匀性好、对可见光透明、制备温度低和成本低等优点被认为是适合驱动有机发光二极管（OLED）和高分辨率液晶显示（LCD）的理想有源器件，并成为当前学界和业界的研究热点。但是，目前MO-TFT仍然面临电学和光学性能不稳定的问题，限制了其产业化应用，需要从材料、器件结构及薄膜界面等方面进行深入的基础研究，才有可能从根本上解决这一瓶颈问题。为此，该申请项目拟研究MO-TFT稳定性的机理问题，重点研究MO材料的内部规律，包括其组分、薄膜结构、离子配位状态、能带结构和载流子输运规律等，并结合对器件结构和界面物理的研究建立科学的物理模型，深层次指导材料设计和器件制备，获得有自主知识产权的高稳定的MO材料体系，最终实现基本了解和解决MO-TFT稳定性问题的目标，并实现稳定的AMOLED样机。

中文关键词： 金属氧化物；薄膜晶体管；稳定性；；

英文摘要： Metal-oxide (MO, such as ZnO, IGZO, etc.) thin-film transistor is considered to be one of the most suitable devices to drive organic light-emitting diodes (OLEDs) and high resolution liquid crystal displays (LCDs), and has attracted much attention of the scientists and industrial circles because of its advantages of high mobility, good uniformity, transparent to visible light, low processing temperature, low cost, etc. To date, the main problem of the MO-TFTs is the electrical and optical instability which is the largest obstacle to the industrial applications. In order to solve this problem, deep research on the MO materials, device structures, and the interface is required. This applying project is going to investigate the mechanisms of the stability of the MO-TFTs, focusing on the MO materials, such as composition, film structure, ion distribution, energy band structure, and the carrier transportation rule, establishing a scientific model by combining the research on the device structures and the interface physics, directing the design of the MO materials, developing high-stable MO materials, realizing the aim of solving the problem of the TFT instability, and obtaining high-stable AMOLED display.

英文关键词： Metal oxide；Thin-film transistor；Stability；；