绝缘体上锗(GOI)纳米带应变调控机理及其MOSFET研究

项目名称： 绝缘体上锗(GOI)纳米带应变调控机理及其MOSFET研究

项目编号： No.61474094

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 李成

作者单位： 厦门大学

项目金额： 85万元

中文摘要： 绝缘体上锗（GOI）纳米带兼具Ge高载流子迁移率和SOI材料的优点，是制备短沟道MOSFET的优选材料，也是研究纳米尺度物理效应的重要载体。项目提出局域氧化SOI衬底上SiGe条形结构制备GOI纳米带，着重研究在GOI纳米带中引入应变的物理机理及其调控方法。通过局域氧化过程中绝缘介质与Ge相互作用、尺寸效应、介质应变传递以及NiGe合金等与硅工艺兼容技术的研究，构建调控GOI纳米带应变类型和大小的模型。解决GOI纳米带制备过程中纳米尺度引起的氧化自限制效应及尺寸和应变分布不均匀性问题，制备出压应变可控的高质量GOI纳米带。在此基础上，采用等离子原子层沉积（PEALD）方法探索GOI纳米带表面钝化的新方法，研究应变、界面态以及量子限制效应对GOI纳米带沟道材料能带结构改性及其载流子输运特性的影响。制备出高K介质多栅结构GOI纳米带肖特基源漏结MOSFET，获得高的有效载流子迁移率和开关比。

中文关键词： 绝缘体上锗；应变锗；迁移率；MOS器件

英文摘要： Germanium-on-insulator (GOI) nanobelt (/nanowire) is one of the promising materials for short-channel MOSFET　due　to its many advantages including high carrier mobility and low leakage current with buried insulator. It is also generally used for the study of physical effect of nanostructures. In this project, we propose to fabricate GOI nanobelts by local oxidation of SiGe stripes on SOI substrates. The mechanisms to introduce strain on GOI nanobelts and the modification of the strain with Si-compatible technology will be investigated systematically. The strain in GOI nanobelt is expected to be modified during the fabrication and post treatment processes, such as selective oxidation of the patterns defined by etching and depositing dielectrics, post-deposition stress lines, as well as some novel methods. The high crystal quality GOI nanobelts with large compressive strain will be fabricated. After that, the influence of strain, interface state density, and quantum confinement effect on the carrier mobility of GOI nanobelts will be studied with tailoring energy band structures. Atomic layer dielectrics to passivate surface states of GOI nanobelts will be optimized with plasma-enhanced atom layer deposition methods. The Ge nanobelt multi-gates Schottky barrier metal- oxide- semiconductor field effect transistor (SB-MOSFET) will be fabricated and characterized with high effective carrier mobilities.

英文关键词： germanium-on-insulator;strained germanium;carrier mobility;MOSFET