GaN异质结器件场控能带（FCE）模型与新结构

项目名称： GaN异质结器件场控能带（FCE）模型与新结构

项目编号： No.61274090

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 陈万军

作者单位： 电子科技大学

项目金额： 88万元

中文摘要： 氮化镓（GaN）电子器件是国际半导体领域研究热点和战略制高点之一。本申请对GaN异质结器件模型与新结构开展基础研究，其主要创新研究为：1）提出场控能带（FCE）模型- - -通过研究极化电场、内建电场和外加电场与异质结能带结构的关系以及能带结构变化对异质结器件工作机理的影响，揭示增强型GaN异质结器件的物理本质，寻求GaN异质结器件的场控能带规律，获得耗尽型和增强型异质结器件场控能带的统一解析式，为研究GaN异质结器件提供理论基础和指导思想。该模型具有普适性，不仅适用于AlGaN/GaN器件，也可应用于其它异质结体系的器件研究中；2）在FCE模型指导下，提出一种场致隧穿增强型AlGaN/GaN HEMT新结构，并进行器件仿真和实验验证，得到一种阈值电压大于1.5V、漏极电流大于350mA/mm的新型增强型GaN器件。本申请是一项器件理论与实验的应用基础研究，对GaN电子器件的发展具有重要意义。

中文关键词： 氮化镓；场控能带模型；增强型；异质结器件；

英文摘要： The electronic device based on Gallium nitride(GaN) is one of the international research focuses. This application studies the theory of GaN heterojunction and novel device structures. The innovations involved in this application include: 1)to set up a Filed Control Energy-band(FCE) model - - by researching influence of polarized, built-in and extrinsic electric filed and the energy bands on the working condition of the heterojunction device, thus to reveal the physical nature of enhancement mode GaN heterojunction device and obtain the rules of field control energy-band, and further to propose an universal analytical expression for enhancement mode and depletion mode device, which serves as a theory foundation and guidance for researchers of both GaN based and other material based heterojunction devices. 2)based on FCE model, to propose a fieled induced tunneling AlGaN/GaN HEMT, and to verify the structure both by simulation and experiments, thus to obtain a novel enhancement mode GaN device with threshold voltage above 1.5 V and maximum drain current above 350 mA/mm. This application is a world wide advanced foundamental research project, with significant scientific and practical value.

英文关键词： Gallium nitride (GaN)；Field control energy-band model；enhancement mode；heterojunction device；