SIS结构紫光太阳电池的研究

项目名称： SIS结构紫光太阳电池的研究

项目编号： No.60876045

项目类型： 面上项目

立项/批准年度： 2009

项目学科： 金属学与金属工艺

项目作者： 马忠权

作者单位： 上海大学

项目金额： 40万元

中文摘要： 本课题历经三年，通过薄膜材料的结构优化实验和异质结势垒区能带的设计与计算，深入探索了构成极性-共价键半导体异质结器件的光伏物理性质，研究了AZO、ITO 和 TiO2等透明导电(TCO)薄膜材料和SiO2绝缘层的生长机理、品质因素及光物理性质和器件的隧道结特征，制备了SIS和SINP两种结构的紫外响应增强型光电池，其SINP结构器件的光电转换效率超过 13.86%，具有明显的光谱吸收展宽性质和较高的短路电流密度（> 38.78 mA/cm2)。简单SIS结构器件的费米能级定扎和界面区高势垒导致具有较差的光伏效应，而低温时的量子隧穿电流密度测量表明，对于超薄SiO2绝缘层的设置，表面钝化效果明显，但界面区有效内建电场的产生不够，即固定电荷浓度没有达到预期目标。仍需解决三个方面的问题：（1）降低界面态；（2）制备出电子输运透明的钝化层和强有力的内建电场；（3）能带调制后产生较大的准费米能差，增加开路电压和短路电流。 在本课题的实施过程中，发表学术论文31篇，全部进入SCI, EI和ISTP收录体系，参编专著（Solar Cells）一部，已授权中国发明专利2项，培养了5名博士，8名硕士。

中文关键词： SIS器件；紫外光响应；量子隧穿；异质结光电池

英文摘要： In this project, the fabrication and assembly of functional thin film materials,such as AZO, ITO, silicon dioxide and titanium oxide,on silicon substrate with special processing and techniques,the photovoltaic properties and energy band structure have been investigated by the refined experiments and theoreticl desin for the polarity-covalence heterojunction device. The studies on the microstructure and the growth mechanism of those TCO thin film and SiO2 buffer layer which influence on the photovoltaic properties of SINP and SIS devices have been carried out. The ultraviolet response enhancement for both SIS and SINP devices has been obtained and the SINP device shown a photovoltaic properties in short-circuit current and efficiency,respectively, while SIS device manifested a quantum tunneling effect at low temperature. The bad build-in field and high barrier within interface region as well as localized Fermi-Level in doped TCO film caused the worse phtovoltaic effect for SIS device even though the improvement of a surface passivation of SiO2 layer on Si, which open the way for future research on:(1)lower density of interface states; (2)stronger build-in field for the separation of photon-induced carriers ;(3)proper modulation of energy band and the level of quasi-Fermi state in the TCO materials for the increase of open-circuit voltage and short-circuit current. Furthermore, the most of the targets in the project has been completed, including the number of publications and the foster of Ph.D and Master degree students of 13 candidates.

英文关键词： SIS device; Ultraviolet response; Quantum tunneling; Heterojunction opto-electronic cell