高Ge组分SGOI衬底上Hf基高k介质材料的研究

项目名称： 高Ge组分SGOI衬底上Hf基高k介质材料的研究

项目编号： No.61306007

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 刘旭焱

作者单位： 南阳师范学院

项目金额： 25万元

中文摘要： 随着尺寸等比例缩小逐渐逼近体硅技术的物理极限，短沟道效应、阈值电压漂移、漏电流增大等问题成为制约集成电路发展的瓶颈，而高迁移率沟道材料和新型栅介质等新技术是解决问题的关键。本项目以Hf基高k材料在高迁移率衬底材料SGOI上的应用为目的，对其性能和相关机理展开研究。利用改良型Ge浓缩和分步浓缩法制备高Ge组分SGOI衬底材料，研究其浓缩机理，建立相应的浓缩模型；为研究HfO2/SiO2堆垛高k层性能，借助提出的浓缩机理和特殊减薄法解决在SGOI上制备超薄SiO2层的关键技术问题；通过系统实验和理论分析，研究材料厚度、组分、结构、界面和电学性能等因素之间的相互影响，揭示衬底Ge组分对高k介质层性能的影响机理。以此为依据，开发在高Ge组分SGOI上等效栅氧厚度较小和漏电流密度较低的高k材料，推动Hf基高k介质在高迁移率衬底SGOI上的应用。

中文关键词： 绝缘体上锗硅；氧化铪；等效栅氧厚度；；

英文摘要： When the integrated circuit (IC) feature size is scaling down to deep nanometers, the physical limit of traditional silicon process is being approached and several problems emerged: short-channel effect, drift of threshold voltage and increase of current leakage, which have became a bottle neck of IC development. Such new techniques as high mobility channel material and novel gate dielectric are the key of dealing with the problems. In this project, aiming to the applications of Hf-based high-k material on SGOI with a high carrier mobility, performance and related mechanism of the material system will be studied exhaustively. High Ge content SGOI substrate will be fabricated through modified Ge condensation and multi-step condensation，then a condensation module will be built. For studying of HfO2/SiO2 stacking material, a key technique using the condensation mechanism and a special thinning method is proposed to prepare ultrathin SiO2 layer on SGOI. By means of systematic experiments, revealing the mutual influence among the materail thickness, component, structure, interface and electrical properties，and invealing the effect mechanism of Ge content to high k dielectric layers. On the basis of above study, this project will develop a solution of high k material on SGOI with a high Ge content, which can supply th

英文关键词： SGOI；HfO2；EOT；；