高性能六方氮化硼日盲探测器的研究

项目名称： 高性能六方氮化硼日盲探测器的研究

项目编号： No.61474055

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 陈占国

作者单位： 吉林大学

项目金额： 85万元

中文摘要： 六方氮化硼（hBN）是人工合成的直接带隙半导体材料，禁带宽度高达5.97eV，本征吸收限约为207.5nm，有很高的带边吸收系数、热导率、电阻率和本征击穿电场，有极高的热稳定性和化学稳定性，抗高能粒子辐射能力强，是制作日盲探测器的理想材料。本项目拟采用改进的溶液生长技术，在高温常压条件下合成高纯度、大尺寸hBN单晶，用液相外延技术在石墨衬底上制备大面积、高质量hBN外延层，并分别以hBN单晶和外延层为基底，研制高性能日盲探测器。基于hBN单晶和液相生长的外延层制作日盲探测器的报道目前尚未见到。由于hBN与石墨烯晶格十分匹配，探测器拟采用石墨烯透明电极以增大光照面积。为了研制PN结型hBN日盲探测器，研究内容还包括hBN单晶和外延层的原位掺杂和PN结制备等，这些研究也未见报道。本项目的开展不仅会丰富日盲探测器体系，促进日盲探测器的发展，还将为hBN在光电功能材料领域中的广泛应用奠定坚实基础。

中文关键词： 日盲光电探测器；紫外探测器；宽禁带半导体；氮化物半导体；半导体器件

英文摘要： Hexagonal boron nitride (hBN) is a kind of synthesized direct-gap semiconductor. The bandgap and intrinsic absorption edge of hBN are 5.97eV and 207.5nm respectively. hBN has vey high absorption coefficient, thermal conductivity, electrical resistivity, dielectric strength, thermal and chemical stability and radiation hardness, so hBN is an ideal candidate material for solor-blind photodectors. In this project, an improved solution growth technique will be used for synthesizing high-purity and large-size hBN single crystals under atmosphere and high temperatue, and liquid phase epitaxy will be used to growth lager-area and high-quality hBN epitaxial layers on graphite substrates. Besed on the synthesized hBN single crystals and epitaxial layers, high-performance solor-blind photodectros will be manufactured. We haven't found any reports about solor-blind photodectros based on hBN single crystals and epitaxial layers prepared by the liquid phase epitaxy. Because the lattice of the graphene matches that of hBN very well, the graphene transparent electrodes will be deposited on the hBN photodetctors to increase the illumination area. In order to manufacture hBN photodiodes, the in-situ doping and PN juntion of hBN crystals and epitaxial layers will be also researched. These investigations haven't been found in any reports yet. This project not only can enrich the family of solor-blind photodectors and boost the development of solor-blind photodectors, but also will lay a solid foundation for the wide applictions of hBN as the photoelectric function material.

英文关键词： Solor-blind photodetectors;Ultraviolet detectors;Wide-gap semicondutors;Nitride semiconductors;Semiconductor devices