硫化钼层数相关的弹性及力电耦合物理力学性能研究

项目名称： 硫化钼层数相关的弹性及力电耦合物理力学性能研究

项目编号： No.11302100

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 数理科学和化学

项目作者： 台国安

作者单位： 南京航空航天大学

项目金额： 26万元

中文摘要： 二维层状材料的机-电-磁-热多场耦合物理力学性能研究是发展高性能微/纳机电器件和系统的重要方向。相比石墨烯，单层及少数层硫化钼是发展微/纳机电器件极具潜力的半导体材料,与其层数相关的弹性及力电耦合物理力学性能研究是构建高性能微/纳器件的基础，但与之相关的研究还十分缺乏。本项目将利用化学气相沉积法获得硫化钼，通过微/纳制造技术构筑微/纳沟道和空洞结构模板，探索与其层数相关的弹性模量；使用原子力显微镜技术进行硫化钼原位力电耦合实验，探索机械形变、外加电场对硫化钼电输运性能的调控规律；同时将分子动力学模拟和密度泛函理论结合，发展硫化钼层数相关的弹性及力电耦合物理力学建模和计算技术，探索层间耦合、电荷注入对硫化钼弹性及力电耦合行为的影响规律。本项目通过理论与实验结合，发展出硫化钼层数相关的应变调控技术及多场耦合物理力学原理和器件，为开发高性能硫化钼微/纳机电器件和系统提供科学基础和技术支持。

中文关键词： 硫化钼；原子力显微镜；力电耦合；物理力学；应变调控

英文摘要： Physical-mechanical properties based on mechanical-electric- magnetic-thermal multifield coupling are very important to develop high-performance micro/nanoscale electromechanical devices and systems. Compared with graphene, monolayer and few-layer molybdenum disulfide (MoS2) are fasinating semiconductor materials for fabricating high-performance micro/nanoscale electromechanical devices, thickness-dependent elasticity and electromechanical coupling properties are a basis of fabricating high-performance micro/nanocale devices. However，the related theories and experiments are still scare.In this project,thickness-dependent elasticity will be measured by atomic force microscopy, where monolayer and few-layer MoS2 fabricated by chemical vapor deposition will be used,then they will be transferred onto micro/nanoscale templates with channels and holes fabricated through a nanofabrication technique. Particularly,its electromechanical coupling properties will be investigated systematically by an in-situ atomic force microscopy technique to probe the effect of mechanical strain and external electric field on electrical transport properties of MoS2. Simultaneously, by combining molecular dynamical simulation with density functional theory, physical-mechanical simulation and calculation techniques of thickness-dependent el

英文关键词： Molybdenum Disulfide；Atomic Force Microscopy；Electromechanical Coupling；Physical Mechanics；Strain Tuning