过渡金属掺杂锗纳米管的可控构筑及性能研究

项目名称： 过渡金属掺杂锗纳米管的可控构筑及性能研究

项目编号： No.51202254

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 无机非金属材料学科

项目作者： 李祥东

作者单位： 中国科学院合肥物质科学研究院

项目金额： 25万元

中文摘要： 构筑微纳尺度的电子器件是设备微型化发展的必然趋势。锗(Ge)作为一种重要的半导体材料，由于其较高的载流子迁移率、较大的波尔半径、较高的锂离子扩散系数等，使得Ge纳米管(GeNTs)在高性能的光电、锂电、近红外探测等领域有潜在应用。此外，理论研究表明锰掺杂的GeNTs具有磁性，在纳米磁存储及传感领域有重要应用。然而与碳相比,Ge原子更倾向于形成sp3杂化，因此实验中获得的一般是Ge纳米线而非GeNTs。本项目拟以多孔氧化铝为模板,通过溶液浸泡(修饰催化剂前驱体)和化学气相沉积(制备Ge)相结合的方法，旨在氧化铝模板纳米通道内制备出两端开口的GeNT阵列。在此基础上，系统研究不同条件制备GeNTs的光、电特性以及过渡金属掺杂对其结构、性能的影响。该项目将为研究GeNTs的制备工艺，揭示过渡金属掺杂对其结构、性能的影响以及优化Ge基纳米结构性能提供实验基础，对锗基纳米结构器件化有一定的推动作用。

中文关键词： 锗纳米管；化学气相沉积；氧化铝模板；SERS；银纳米颗粒

英文摘要： Building micro- and nano-scale electronic devices is the inevitable trend of device miniaturization. As a salient example, germanium (Ge) nanostructure is particularly interesting for future nanotechnology not just because of its similar structural and electronic properties to those of silicon (e.g., diamond-like structures with tetrahedrally coordinated sp3 hybridized toms), but also for many superior properties over silicon in device applications (e.g., higher intrinsic carrier mobility, larger exciton Bohr radius, greater lithium-ion diffusivity, higher absorption coefficient at near-infrared frequencies). Especially Ge nanotubes (GeNTs), their high specific surface areas together with the superior intrinsic properties of Ge itself makes them promising materials for high-performance nanodevices (e.g., optical electronics, lithium-ion battery, near-infrared photodetector). Furthermore, theoretical studies predicted that Mn-doped GeNTs were theoretically investigated to be metallic and have interesting magnetic properties, making them promising as nanomagnets and nanosensors. However, unlike carbon, Ge prefers sp3 hybridization and favors the tetrahedral diamond-like structures, thereby forming the commonly observed solid Ge nanowires rather than hollow GeNTs. Herein, we firstly tried to develop a facile appro

英文关键词： GeNTs；CVD；AAO；SERS；silver nanoparticles