双层发射极与双层背电场结构的晶硅异质结太阳电池的设计与可控构筑

项目名称： 双层发射极与双层背电场结构的晶硅异质结太阳电池的设计与可控构筑

项目编号： No.61306084

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 黄海宾

作者单位： 南昌大学

项目金额： 25万元

中文摘要： 晶体硅基异质结太阳电池（SHJC）在性能和成本上相对于现行扩散制结晶硅太阳都有潜在优势，其结构和组分有很大变化发展空间，然而多年来它为HIT结构所主导，未能充分发挥该优势。本项目提出新的SHJC结构，包括重－轻掺杂双层硅基薄膜复合结构发射极与背电场，其中各层基体以Si:H、SiOx:H、SiCx:H和SiGex:H等不同带隙的薄膜来优化匹配。研究内容包括：双层复合结构中膜层厚度、光电性能及膜层间的纳米尺度效应对SHJC的转换效率、量子效率等性能的影响规律与作用机制的理论分析；双层发射极与双层背电场的SHJC的结构设计优化及可控构筑。通过双层复合结构引入，将减少器件中光生载流子的复合损耗和串联电阻，实现22%(AM1.5g,25℃)的转换效率,为晶体硅基异质结太阳电池的发展提供新的思路。

中文关键词： 硅基异质结太阳电池；重-轻掺杂双层发射极；重掺杂c-Si背场；掺氧非晶硅钝化层；高转换效率

英文摘要： Crystalline silicon-based heterojunction solar cells (SHJC) have potential advantages over conventional diffused junction silicon solar cells on performance and cost. The structures and components of SHJC have great room for variations and development. However, for many years HIT structure has dominated the SHJC development, and this advantage has not been exploited. In present project, novel SHJC structures have been proposed, include emitters and back surface fields (BSF) composed of heavy-shallow doped silicon-based double-layer structure. Silicon-based films with different bandgaps, such as SiOx:H, SiCx:H, Si:H and SiGex:H, will be chosen to compose the layers. The works will include, a) computational analysis of the effects of thickness, optical-electrical properties, and nano-scale-effect of the doped thin films on performances of the SHJC cells, and their mechanisms; b) the optimal design and targeted fabrication of the SHJC with double-layer emitter and double-layer BSF. It is hoped that the series resistance and the recombination rate of the light-induced carriers of the cells would be reduced with the effect of the heavy-shallow doped double-layer structure. The efficiency of the SHJC with the new structured emitter and BSF would reach 22%(AM1.5g,25℃). It is also hoped that the present research would

英文关键词： c-Si heterojunction solar cell；heavy-shallow doped double-layer emitter；heavy doped c-Si back sruface field；Oxygen doped a-Si:H passivation layer；high transfer efficiency