无氨法制备高质量III族氮化物纳米线及其表面/界面调控机制研究

项目名称： 无氨法制备高质量III族氮化物纳米线及其表面/界面调控机制研究

项目编号： No.51472010

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 一般工业技术

项目作者： 王如志

作者单位： 北京工业大学

项目金额： 83万元

中文摘要： III氮化物纳米线在激光、传感与能源等新一代微纳器件中具有十分重要的应用前景，但目前高成本重污染的制备方法严重制约了其器件应用与发展。本项目拟发展环境友好、成本低廉的基于氮气离子化的无氨法实现高质量III族氮化物纳米线可控生长，并建立基于表面/界面调控的普适纳米线生长及其物性预测模型。实验上，通过系统研究无氨生长环境下纳米线生长过程中的表面/界面结构特征及调控方法，推演无氨环境下N离子的迁移规律与反应特性，探索高质量GaN、BN及AlN纳米线的无氨法可控制备的关键参数与条件。理论上，结合实验参数，构建纳米线生长过程中的表面/界面动态演化模型，建立起适用于III族氮化物并可拓展到其它体系的纳米线原子级可控生长模型，并探索结构对性能的影响规律。本项目期望从纳米线的表面/界面演化中澄清无氨法生长的驱动机理，最终为高质量III族氮化物纳米线可控生长及其器件设计提供可靠的技术方案与理论储备。

中文关键词： 纳米线；III族氮化物；表面/界面；生长调控；无氨法

英文摘要： III nitride nanowire has a very important application prospect in the next generation micro-nano devices of laser, sensing and energy. However, high cost and heavy pollution in preparation has seriously hampered applications and development of its device at the present time. The project intends to develop environment-friendly , low-cost non-ammoniated method of ionized nitrogen for the controlled growth of high -quality III nitride nanowires, and based on surface/interface characteristic, proposes the universal models of atomic-scale controlled growth and performance prediction for nanwires. Experimentally, from systematic studies on the surface/ interface behavior and theirs control methods in growth process for nanowires with non-ammoniated environment and conditions , it will find out the migration and reactivity of N ions in non-ammonia preparation, and explore the key parameters and conditions of non- ammoniated controlled growth for high quality GaN, BN and AlN nanowires. Theoretically, by the combination of experimental parameters , it will build the surface/interface dynamic evolution model in the VLS growth of nanowires, and set up the universal models of atomic-scale controlled growth for the III -nitride nanowires extending to other nanowires, then to explore the prediction schemes of their photoelectric performance. From the evolution of surface/interface in nanowire, this project will in-depth clarifies the driving mechanism of the non- ammoniated growth of nanowires, hopes to supply a good research foundation of the controlled growth and devices design of the high-quality III-nitride nanowires.

英文关键词： Naowires;III-nitride;Surface/interface;Growth control;Non-ammoniated method