低能电子束辐照对一维半导体纳米材料电子传输和光电性能的影响及机理研究

项目名称： 低能电子束辐照对一维半导体纳米材料电子传输和光电性能的影响及机理研究

项目编号： No.61471270

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 张礼杰

作者单位： 温州大学

项目金额： 80万元

中文摘要： 近年来，基于电子显微镜原位研究一维半导体纳米材料物理性能是纳米科学与技术领域的重要研究方向。由于原位研究过程中材料无法避免电子束辐照，因此，电子束辐照对其性能（如电子传输和光电性能）的影响问题至关重要。本项目以典型一维半导体纳米材料（MoO3、CdSe、Bi2Se3和Zn2As3）为研究对象，采用扫描电子显微镜-拉曼光谱-电学表征联用系统，研究电子束辐照前后一维半导体纳米材料电子传输和光电性能的变化规律，重点研究晶体结构、表界面态和能带结构在该性能变化过程中所起的作用及机理，对阐明低能电子束（0.2-30 keV）辐照影响一维半导体纳米材料电子传输和光电性能的机制有重要意义。在此基础上，结合电子束辐照和表界面处理技术优化一维半导体纳米器件的电子传输和光电性能。

中文关键词： 电子束辐照；半导体一维纳米材料；电子传输性能；光电性能；机理

英文摘要： Recently, the in-situ characterization of physical properties of the one-dimensional semiconductor nanomaterials by using in-situ electron microscope has attracted much attention all over the world. It is important to reveal the effect of electron-beam irradiation on the properties (e.g. electrical transport and optoelectrical properties) of one-dimensional semiconductor nanomaterials because the electron-beam irradiation is inevitable in the in-situ process. In this project, the one-dimensional semiconductor nanomaterials will be firstly fabricated into nanostructured devices and then their electron transportation and optpelectrical properties will be systematically investigated before and after electron-beam irradiation by using a combined system based on scanning electron micrope, Raman spectrometer and semiconductor characterization system. We will focus our efford on the influences of the crystal structure, surface and interface states, electron energy band etc. of the nanomaterials on the properties under electron-beam irradiation and thiei mechanism. We also try to improve the performance of nanodevices based on the one-dimensional nanomaterials by using the electron-beam irradiaion and surface passivation methods.

英文关键词： electron beam irradiation;one-dimensional semiconductor nanomaterials;electrical transport property;optoelectrical property;mechanism