新型二维晶体材料锑烯的电子能带结构及输运特性研究

项目名称： 新型二维晶体材料锑烯的电子能带结构及输运特性研究

项目编号： No.51502140

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 一般工业技术

项目作者： 严仲

作者单位： 南京理工大学

项目金额： 21万元

中文摘要： 最近，砷烯、锑烯材料作为由第五主族原子构成的新型二维晶体单质材料受到了极大关注。第一性原理计算预言砷烯、锑烯具有热动力学稳定性，存在层数依赖的半金属——半导体转变，以及外加应变条件下的间接带隙到直接带隙转变。然而，与砷烯锑烯相关的实验工作尚未有报道。本项目拟采用机械剥离法和液相剥离法以块体金属锑为原料制备少层或者单层的二维锑烯材料。研究其电子能带结构随着原子层数以及外加电场所发生变化的调制规律，研究在外加应变条件下电子能带结构的转变，揭示少层乃至单层锑烯材料中半金属到半导体转变的物理机制；设计制备基于二维锑烯材料的薄膜晶体管器件，研究其输运特性随着原子层数、外加电场、温度等条件发生变化的调制规律。通过本项目的研究，期望能从实验上对前期理论计算的结果加以验证，揭示其中的物理机制，为进一步设计制备基于二维砷烯和锑烯材料的微电子和光电子器件打下坚实的基础。

中文关键词： 二维晶体材料；锑烯；电子能带结构；输运特性；薄膜晶体管

英文摘要： Very recently, arsenene and antimonene consisting of atomically thin layer of group V elements have attracted tremendous interests as new members of elemental two-dimensional crystals. First principle calculations predict that arsenene and antimonene are thermodynamically stable and they undergo semimetal to semiconductor transitions dependant on the number of atomic layers. It has also been predicted that biaxial tensile strain can turn the indirect band gap of arsenene and antimonene into direct band gap. However, no experimental results have been reported about arsenene or antimonene and the mechanisms of predicted band structure transitions are still unknown. In this proposal, the applicants and colleagues plan to apply mechanical exfoliation and liquid phase exfoliation method to produce few-layer or even monolayer antimonene out of metallic antimony. We plan to study the evolvement of electronic band structure on varying number of layers, external field and external strain. We hope to clarify the mechanisms of thickness dependant semimetal to semiconductor transition in antimonene. We will design and fabricate thin film transistors based on antimonene and study the transport properties with varying number of atomic layers, external field and temperatures. Through this project, we hope to provide experimental evidence to test the theoretical predictions on band structure transitions in antimonene and unravel the unknown mechanisms. Our work might pave the road to future applications of microelectronic and optoelectronic devices based on two-dimensional antimonene.

英文关键词： two-dimensional crystals;antimonene;electronic band structure;transport properties;thin film transistor