项目名称: 有机HEMT晶体管
项目编号: No.51473160
项目类型: 面上项目
立项/批准年度: 2015
项目学科: 一般工业技术
项目作者: 王海波
作者单位: 吉林大学
项目金额: 85万元
中文摘要: HEMT器件是无机半导体能带工程的典型运用。受到能量势阱限制的电子分布在一个很薄的区域内,形成准二维电子气体(2DEG)。利用2DEG作为传输沟道制备的晶体管(HEMT)具有很高的载流子迁移率。如果要在有机半导体中实现能带工程制备高迁移率的HEMT器件,需满足两个基本条件。第一,载流子的能带传输。实验已经证明高迁移率半导体具有能带或者类能带的传输特性,这为能带工程的实现提供了可能。第二,制备规整的界面,减少散射,利于2DEG的高效传输。有机弱外延生长技术能够制备表面达到分子级的平滑程度的有机薄膜,从而能够获得规整的有机界面。因此,有机半导体在理论和技术上的成熟为实现其能带工程提供了机会。本项目拟利用有机2DEG作为传输沟道制备HEMT晶体管,并将探讨有机2DEG的形成与材料能级匹配的关系,以及揭示有机2DEG的特性。
中文关键词: 有机半导体;有机晶体管;二维电子气体;HEMT;能带工程
英文摘要: The HEMT device is a typical example of band engineering of inorganic semiconductors. Electrons distribute in a very thin layer due to the limit of energy well, and form a two dimensional electron gas (2DEG). By using the 2DEG as transport channel, HEMT shows a high mobility. If we want to realize the band engineering of organic semiconductors, the following points are necessary. First, the band transport of charge carrier. Many experiments have demonstrated the band or band-like transport for organic semiconductors with the high mobility. Second, sharp interfaces can reduce the scattering, and is benefit to the 2DEG transport. Organic weak epitaxy growth can fabricate the smooth thin films at the molecular degree, and then will obtain the sharp interfaces. Therefore, the band engineering of organic semiconductors is possible in theory and technology. This project will fabricate HEMT devices by using organic 2DEG as transport channel, and will also explore the relationship of between the formation of 2DEG and the match of energy levels, and reveal the features of 2DEG.
英文关键词: organic semiconductor;organic transistor;two-dimensional electron gas;HEMT;band engineering