高响应度氧化镓日盲紫外探测材料生长和器件研制

项目名称： 高响应度氧化镓日盲紫外探测材料生长和器件研制

项目编号： No.61306063

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 王晓峰

作者单位： 中国科学院半导体研究所

项目金额： 25万元

中文摘要： Ga2O3是唯一一个禁带宽度在UV-C波段的可掺杂的宽禁带半导体材料。但目前存在以下问题： 缺乏合适的异质外延衬底材料，氧化镓薄膜多是多晶、晶体质量差；缺乏可控的掺杂技术，p型掺杂困难；探测器响应度低、响应时间慢、响应范围难以调节，以及载流子传输机制尚不明确等。 本项目将研究1）引入氧化镓可协变缓冲层来释放、转移和隔离由于衬底和氧化镓之间大的晶格失配； 2）采用Sn金属蒸气源实现氧化镓的n型可控掺杂 3）采用透明电极既做氧化镓的引线电极，又和氧化镓形成异质结探测器。

中文关键词： 氧化镓；薄膜；探测器；；

英文摘要： Ga2O3 is the only windbandgap conductive semiconductor material within UV-C band（200-280 nm）. Three main problems are obstacles to the rapid progress of Ga2O3 UV photodetector. The first one is the lack of suitable substrates. Only polycrystalline Ga2O3 films can be obtained. The second one is the doping control technique. The third one is relative with the above two: low responsibility, slow response, untunable response wavelength, and ambiguity about carrier transport mechanism. In this project, we will focus on wiping off thse problems. 1) Growth of high quality Ga2O3 film by introducing a flexible GaN buffer to transfer,absorb and reduce the strain in Ga2O3 because of the big lattice mistch between Ga2O3 and sapphire or quartz substrate. b) Growth of doping control Ga2O3 using Sn metal vapor as the presuror gas. c) fabrication of Ga2O3 photodetector with high responsibility. c.1) Transparent electrode works as electrode as well as part of the heterojunction. c.2) Undoped Ga2O3 layer is introduced to make MIS photodector and nin photodetector.

英文关键词： Ga2O3；film growth；solarblind detector；oxygen vacancy；