新型窄带隙锑化物二维电子气材料及输运特性研究

项目名称： 新型窄带隙锑化物二维电子气材料及输运特性研究

项目编号： No.61204012

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 张杨

作者单位： 中国科学院半导体研究所

项目金额： 24万元

中文摘要： III-V族窄带隙锑化物半导体技术是国际上正在开展的新一代化合物半导体技术，是近5年来飞速发展的新领域。基于锑化物材料的微电子器件具有超高频、超低功耗等独一无二的特点，在制造新一代化合物半导体集成电路上备受青睐，发展前景十分广阔。本项目以研究新型窄带隙锑化物二维电子气材料的结构设计、材料生长以及输运特性为目标，采用多能带kop模型自洽求解Schr?dinger方程和Poisson方程的方法对调制掺杂AlSb/InAs量子阱能带进行计算，设计并优化二维电子气材料结构参数；采用分子束外延技术对锑化物外延材料生长机理及生长动力学进行研究，解决大失配缓冲层带来的位错、缺陷和缓冲层漏电问题，以及异质结界面互扩散等一系列问题；研究锑化物二维电子气散射机制，优化输运特性，最终制备出具有一流电学性能的AlSb/InAs二维电子气材料，为今后研制锑化物基微电子器件及电路奠定坚实的基础。

中文关键词： 锑化物半导体；窄带隙；二维电子气；分子束外延；

英文摘要： III-V narrow-gap antimonide semiconductors as next-generation compound semiconductors is quickly developing around the world in the past five years. With the advangtages of ultra-high speed and ultra-low power Sb-based microelectronic devices have the potential to enable revolutionary applications in monolithic integrated circuits. The study of this project includes Sb-based two dimensional electron gas(2DEG) material design, material growth, and transport properties. Specially, we will make a theoretical study of the energy-band structures in modulation-doped AlSb/InAs quantum wells by self-consistent calculation of the Schr?dinger and Poisson equations based multi-band kop model, design and optimize 2DEG material structure. In order to decrease dislocation and defect densities of buffer layer, reduce leaking of buffer layers, and lower the effect of heterojunction interface interdiffusion, we will also investigate their growth mechanism and growth kinetics by molecular beam epitaxy technology. And we will study 2DEG scattering mechanisms and optimize transport properties, finally develope AlSb/InAs 2DEG material with excellent electrical properties. This study will build a solid foundation for future development of Sb-based microelectronic devices and integrated circuits.

英文关键词： Antimonide based compound semiconductors；Narrow gap；two dimensional electron gas；molecular beam epitaxy；