高k材料/Si衬底界面特性及电子态结构研究

项目名称： 高k材料/Si衬底界面特性及电子态结构研究

项目编号： No.61464010

项目类型： 地区科学基金项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 阿布都艾则孜·阿布来提

作者单位： 新疆大学

项目金额： 48万元

中文摘要： 随着微电子技术的发展，对金属-二氧化物-半导体场效应晶体管（MOSFET）制造工艺和性能的要求越来越高。这种发展趋势对被当作MOSFET介电材料的二氧化硅（SiO2）提出新要求，即厚度越来越稀薄。因涉及到SiO2介电性和MOSFET的漏电，SiO2的厚度也不能做到无限细薄。为了克服漏电，一般用稀土氧化物高k材料来替换SiO2。然而稀土氧化物高k材料与衬底界面中形成的稀土硅化物的结晶性、化学组态和电子态密度等方面存在一些疑问。因此在Si衬底上生长稀土氧化物薄膜，并通过研究高k氧化物/Si界面来提高MOSFET性能具有重要的研究意义。本项目通过激光分子束外延法，在Si衬底上生长1ML至60ML层厚的稀土(La，Er，Ce）氧化物薄膜，并原位（原位制备，原位扫描隧道显微镜、同步辐射光电子能谱和吸收谱表征）进行氧化物/半导体界面特性及电子态结构研究来探讨各种界面效应对MOSFET性能改善的影响。

中文关键词： 稀土氧化物薄膜；激光分子束外延；界面；同步辐射；电子结构

英文摘要： The rapid development of microelectronics industry has caused the new requirement for manufacturing techniques and performance of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). It results the thickness of the silicon oxide (SiO2), which serve as dielectrics in MOSFET decreased. However, the SiO2 faces its scaling limits due to reduced dielectric reliability and significantly increased leakage current. In order to solve this problem, SiO2 was replaced by the rare-earth oxides high dielectric constant (high-k) materials. But there still have some doubt about the crystallinity, chemical state and electronic density of stat (DOS) of rare-earth silicate which formed between high-k materials and silicon substrates. Therefore, replace the SiO2 by rare-earth high-k oxides and investigate the high-k/Si interface have a key importance to improve the performance of MOSFET. In this work, rare-earth(La,Er,Ce) oxides films prepared on Si from 1 ML to 60 ML by laser molecular beam epitaxy, and the oxide/semiconductor interface properties, electronic structure investigated by in situ scanning tunneling microscopy，synchrotron radiation photoemission spectroscopy and X-ray absorption spectroscopy. Finally, the influence of various interfaces effect on performance of MOSFET will be explored.

英文关键词： Rare-earth Oxides Thin Films;Laser Molecular Beam Epitaxy;Interface;Synchrotron Radiation;Electronic Structure