GaAs基长波长高功率探测器及动态空间电荷效应制约研究

项目名称： GaAs基长波长高功率探测器及动态空间电荷效应制约研究

项目编号： No.60876039

项目类型： 面上项目

立项/批准年度： 2009

项目学科： 电工技术

项目作者： 韩勤

作者单位： 中国科学院半导体研究所

项目金额： 35万元

中文摘要： 发展超高速率、超大容量的光纤骨干网络，以及宽带接入技术是目前提高网络性能的两个关键问题，一种能够实现高性能数字和模拟光传输系统的方法是增加入射端的光功率，获得的输出功率能够直接驱动数字逻辑电路或者微波天线。这种方法能简化设计提高性能但是需要有更高探测功率的探测器。本课题经过3年的创新开拓，系统研究了大信号下限制探测器饱和输出的内在及外在物理制约因素、临界条件及其与量子效率制约关系的解除方向，发现了若干重要的物理效应，在探测器结构优化设计、非线性效应抑制、大失配异质兼容材料生长、制备工艺优化等方面取得了重要进展，在器件研制技术上提出和采用了一系列有特色的创新技术与方法，解决了系列关键问题并申请了多项发明专利，成功研制出GaAs基长波长高速、高功率、高线性光电探测器，探测器-5V偏压下暗电流密度4.2×-5A/cm2, 量子效率58%，线性响应光功率超过30mW，3dB带宽12GH，探测波长0.9微米-1.75微米，这是目前GaAs基探测器实现的最长探测波长。探测器性能全面超过了预期的研究目标，达到目前国际最好水平，使我们在GaAs基长波长高功率探测器研究领域保持在国际前列。

中文关键词： 高功率；探测器；GaAs；高线性；长波长

英文摘要： Currently, there are two key technologies for improving the performances of networks, one is the technology for long-haul optical fiber backbone networks with super-high-speed and large data capacity, and the other is the wide band access technology. A practical way to realize digital and analog transmission systems with high performances is to increase the input optical power, therefore the output power from the receiver can drive the digital logic circuit or microwave antenna directly, but it needs high power photodetectors(PDs). During the 3 years of efforts, we focus on the inner/exterior factors and critical conditions which limit the output saturation current of the PDs under large singnal. We found the way to break the restriction between the saturation current and quantum efficiency. The research include optimizing the structure of the photodetectors，restraint of the nonlinear effect, the growth of the metamorphic materials and optimizing the process technologies. We adopted a series of novel techniques and fabricated GaAs based long wavelength high-speed, high output PDs. The photodetector exhibit ultralow dark current densities of 4.2×-5A/cm2 at a reverse bias of 5 V, a quantum efficiency of 58% , and have a linear photoresponse under more than 30mW optical power. The measured ?3 dB bandwidth is 12 GHz .These PDs are available in the range of 1400～1700nm which is the longest detectable wavelength for a GaAs-based photodetector. The performance exceed the anticipated results and keep us stay in front in the field of GaAs-based long wavelength PDs.

英文关键词： high power;photodetector;GaAs;high linearity;long wavelength