FeNi/NiO磁性纳米结构阵列的交换偏置效应

项目名称： FeNi/NiO磁性纳米结构阵列的交换偏置效应

项目编号： No.10804036

项目类型： 青年科学基金项目

立项/批准年度： 2009

项目学科： 化学工业

项目作者： 王雅新

作者单位： 吉林师范大学

项目金额： 17万元

中文摘要： 本课题在纳米球自组装和磁性材料研究的基础上，将两者有效地结合起来，旨在利用磁控溅射技术制备铁磁/反铁磁材料构成的FeNi/NiO双层膜的纳米结构阵列，并对其交换偏置效应进行详细研究。一方面，利用胶体球刻蚀技术，在硅平面衬底上制备尺寸可控的双层膜的纳米点阵列；另一方面，以胶体球曲面为衬底，在球冠上制备双层膜的"帽子"阵列。通过振动样品磁强计、超导量子干涉仪等磁学测试手段研究尺寸、形状、衬底结构等对偏置特征的影响。并将连续膜、纳米点阵列、"帽子"阵列偏置效应进行对比研究，进一步揭示交换偏置产生的微观机理。本课题的研究将为铁磁/反铁磁双层膜纳米结构的制备提供一个新的方法，为纳米磁存储器件的设计提供新的概念和思路，并将为开发具有自主知识产权的高密度磁存储技术提供理论和实践基础。

中文关键词： FeNi/NiO 磁性双层膜；交换偏置；纳米结构阵列

英文摘要： The nanostructured array of FM/AFM bilayer film FeNi/NiO will be fabricated in the magnetron sputtering system by combination of the self-assembly technique of nanosphere with the magnetic properties of materials, and the detailed study on the exchange bias properties will be carried out. Two kinds of magnetic bilayer nanostrutures will be prepared. One is based on the nanosphere lithography technique, in which the nanodot array with controlled size will be prepared the on the flat silicon wafer. The other is to prepare the “ap”array on the tops of the nanospheres which are deposited on the silicon substrate by the self-assembly technique. The characterizations of VSM,SQUID and MOKE will be carried out to study the effects of experimental settings on the exchange bias, such as the nanostructure size, the nanostructure shape and the morphology of the substrate. The different effects of the continuous film, the nanodot array and the “ap” array will throw more light onto the micro-mechanism for the exchange bias. This program will provide a new method for the fabrication of the FM/AFM bilayer nanostructure array, which is also promising theoretically and practically for the design and fabrication of magnetic nanometer memory devices.

英文关键词： FeNi/NiO magnetic bilayer; the exchange