大尺寸高压直流LED芯片制造的关键技术研究

项目名称： 大尺寸高压直流LED芯片制造的关键技术研究

项目编号： No.51305266

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 机械、仪表工业

项目作者： 周圣军

作者单位： 上海交通大学

项目金额： 25万元

中文摘要： 大尺寸高压直流LED芯片（HV LED）利用小电流驱动的小尺寸LED单胞具有高光效的特点，可以有效缓解传统大功率LED芯片受到大电流注入而引起的量子效率衰减效应，在半导体照明领域具有重要的应用价值。然而，目前大尺寸HV LED芯片的发光效率较低，对制约HV LED芯片发光效率进一步提升的因素也缺乏深入的研究。本项目将致力于解决超高效率、大尺寸HV LED芯片制造的若干关键科学问题，重点研究HV LED结构参数与器件性能之间的关系，通过合理的取光结构设计，提高LED单胞出光效率，通过对LED单胞阵列布局方式的优化设计，提高HV LED芯片有源区面积利用率；提出提高大尺寸HV LED芯片发光效率的新结构、新方法，解决光子在相邻LED单胞之间耦合传播引起的光损耗问题，实现发光效率为160lm/W的大尺寸HV LED芯片的设计与制造。

中文关键词： 高压直流LED；出光效率；深隔离沟槽；侧面微结构；光耦合传播

英文摘要： The size scalable high voltage light emitting diodes (HV LED) chip utilizes the high luminous efficiency characteristics of small-size LED cell operated at low injection current condition, which can effectively alleviate the efficiency droop phenomena of the conventional high power LED chip under the high injection current condition, and has a considerable application value in solid-state lighting. However, the luminous effeciency of the size scalable HV LED chip is still low compared to the high power LED. Meanwhile, the method to further improve the luminous efficiency of the size scalable HV LED chip should be investigated in depth. Accordingly,the proposal will solve the key scientific problem of HV LED manufacturing, and focus on the mechanisms of interactions between HV LED structure parameters and deive performance. In order to improve light extraction efficiency and increase utilization ratio of action region area, the optimized light extraction structure and cell array layout are designed. We will also present a new device structure and method to improve the luminous efficiency of HV LED chip, solve the light loss problem caused by light coupling propagation existing along the LED cell array, and realize the design and manufacturing of 160lm/W HV LED chip.

英文关键词： High voltage LED；Light extraction efficiency；Deep isolation trench；Sidewall microstructure；Light coupling propagation