高性能窄禁带半导体碲镉汞太赫兹探测研究

项目名称： 高性能窄禁带半导体碲镉汞太赫兹探测研究

项目编号： No.61274138

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 黄志明

作者单位： 中国科学院上海技术物理研究所

项目金额： 77万元

中文摘要： 太赫兹(THz)波由于其独特性质和应用价值，近年来成为国内外的研究热点，其迅速发展对于太赫兹探测技术提出了新的要求，尤其在成像、安检等新兴起的应用上，要求太赫兹探测器响应速度快、探测灵敏度高、可室温工作、可小型化阵列集成、价格合适，而现有探测器多数因工作温度低、响应速度慢、集成度差已不适合应用发展，因此迫切需要研究性能优异可满足应用需求的太赫兹探测器。 本项目提出采用基于窄禁带半导体碲镉汞材料的电场增强效应，发展新原理的太赫兹探测器。我们将研究碲镉汞材料在太赫兹波段的基本特性，建立碲镉汞太赫兹探测器的物理模型，设计重要参数和仿真器件性能，并进行探测器制作和实验测试，验证探测器的性能。该项目将研究发展快速、灵敏、可集成化、室温工作的高性能太赫兹探测器件，解决太赫兹学科新应用中的器件瓶颈科学问题。

中文关键词： 太赫兹；高灵敏度；光电导效应；探测；

英文摘要： Terahertz(THz) wave has become one of the hottest spots in recent years owing to its unique characteristics and prominent value of applications. However, due to the booming development of THz technology, especially in some new rising fields such as terahertz imaging and security inspection, it requires some outstanding performance on THz detectors of short respond time, high sensitivity, room- temperature operation, miniaturization and reasonable costs. The present THz detectors cannot meet those requirements. So it is necessary to develop new kind of THz detectors with good performance which can fulfill the requirements of the new applications. In this project, we will develop a new principle of THz detectors based on electric field enhanced effect in Narrow Gap Semiconductor Mercury Cadmium Telluride (MCT). We will investigate the fundamental optical properties of MCT materials in THz range, establish a physical model of THz detectors, design the simulators of parameters. Then we will fabricate prototype detectors and test the performance of them according to the results of the simulations.The aim of this project is to develop the key THz detectors which can be integrated and operated at room temperature with fast response, high sensitivity.

英文关键词： Terahertz；high sensitivity；photoelectric effect；detection；