低能垒电荷迁移的有机半导体的合成与场效应管性能

项目名称： 低能垒电荷迁移的有机半导体的合成与场效应管性能

项目编号： No.21472116

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 数理科学和化学

项目作者： 方奇

作者单位： 山东大学

项目金额： 88万元

中文摘要： 为了大幅度提高有机场效应管（OFETs）的迁移率，材料的分子与离子之间的构型重组能应当远小于并戊苯的0.1 eV。 本项目以此功能指标为导向，进行具有低能垒电荷迁移特征的分子结构选型。提出若干种 pi-电子高度离域的、构型高度刚性的、C2v对称的分子结构，其计算重组能可以降到0.05 eV左右，揭示了刚性C2v结构对高迁移率OFETs 材料的意义。 项目设计了一组这样的新化合物作为合成目标，包括以N-7 和N-5-O 为代表的中心氮杂双层多苯稠环化合物，NH-5 等边缘氮杂双层多苯稠环物, O-9 等三层多苯稠环物，以及并二TTF衍生物等。项目将全力合成上述化合物，在此基础上制做性能优异的场效应器件，在迁移率方面取得大的突破。

中文关键词： 能垒；电荷迁移；设计合成；有机半导体；场效应管

英文摘要： To greatly improve the mobility of the OFETs set, the re-organization energy between the molecule and the cation/anion should be much less than 0.1 eV, the tipical value of the well known OFETs compound pentacene. With this ideal in mind, this project try to design such pi-functional molecules which have extremely low energy barrier for charge transport. We found that the re-organization energy of the C2v symmetric rigid molecules can be low down to 0.05 eV. The significance of the C2v symmtry to the high performance OFTTs has therefore been revealed. Several this kind of new compounds have been deliberately designed, including the type of the N-in-centre bis-fused-acene (such as the compound N-7 and N-5-O) and the types of the N-on-edge bis-fused-acene (such as the NH-5), as well as the tris-fused-acene O-9 and the bis-TTF derivative DT-TTP. This project will carry out the material design into execution, synthesizing and preparing such OEFTs materials which will have the mobility larger than the present best OEFTs compounds.

英文关键词： energy barrier;charge transport;synthesis;organic semiconductors;OFETs