半导体激光器腔面介质薄膜损伤机理研究

项目名称： 半导体激光器腔面介质薄膜损伤机理研究

项目编号： No.U1330136

项目类型： 联合基金项目

立项/批准年度： 2014

项目学科： 数理科学和化学

项目作者： 曲轶

作者单位： 长春理工大学

项目金额： 80万元

中文摘要： 由于半导体激光器在激光打印、信息存储、光传感、光纤通信、泵浦固体激光器、工业加工、激光医疗、军事等领域有着非常广泛的应用。国外对高功率半导体激光器实行禁运，而制约其功率提高的最关键问题是腔面介质薄膜损伤问题。针对腔面介质薄膜损伤问题，我们拟通过分析半导体激光器扩散方程和光子速率方程，运用三维热传导方程建立腔面热量分布模型；再通过分析热量分布模型和半导体激光器外延材料固有性质选取腔面介质薄膜材料，进行膜系结构设计；再采用不同的腔面介质薄膜制备方法制备腔面介质薄膜样品；最后通过分析薄膜吸收、薄膜应力、薄膜结构以及元素比例等薄膜特性与损伤阈值的内在联系，不断优化设计制备方法，最终制备出损伤阈值达到5MW/cm2薄膜样品。项目的创新点为（1）建立半导体激光器腔面介质薄膜损伤物理模型，为提高腔面损伤阈值提供理论指导。（2）采用真空解理镀膜技术，使半导体激光器腔面介质质薄膜损伤阈值达到5MW/cm2。

中文关键词： 半导体激光；腔面膜；介质膜；损伤阈值；

英文摘要： Semiconductor lasers have many applications such as laser printing, information storage, optical sensing, optical fiber communications, pumped solid state lasers, industrial processing, laser medical, military and so on. High power semiconductor lasers are embargo at abroad, while the most critical issue is facet dielectric film damage which can increase semiconductor laser power. Contraposing the issue of the facet dielectric films damage for semiconductor laser, we attempt to analysis the diffusion equation and photon rate equation of the semiconductor laser and use of three dimensional heat conduction equations to establish the facet heat distribution model. Then we selected facet dielectric film material and design facet dielectric film structure through analysis the heat distribution model and the inherent nature of the semiconductor laser epitaxial material. We manufacture facet dielectric film sample with different facet dielectric film manufacture method. Finally we analyzed the internal relations between the film absorbed, film stress, film structure, elemental ratio of film properties and damage threshold, and constantly optimize the design and manufacture method, at last the damage threshold achieved 5 MW/cm2.The innovation points are: (1) Establishing the semiconductor laser facet dielectric films da

英文关键词： semiconductor laser；facet coating；optical dielectric film；damage threshold；