氧空位调制磁性元素掺杂二氧化钛铁磁性的可逆转变性质研究

项目名称： 氧空位调制磁性元素掺杂二氧化钛铁磁性的可逆转变性质研究

项目编号： No.11304051

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 数理科学和化学

项目作者： 李新宇

作者单位： 桂林理工大学

项目金额： 29万元

中文摘要： 铁磁性半导体材料作为重要的一类自旋电子学材料，在实际应用中受到普遍关注，是当前的研究热点之一。本项目在前期研究基础上，拟采用磁控溅射技术制备过渡族磁性元素掺杂的TiO2稀磁半导体薄膜及其异质结系列样品，系统分析薄膜溅射过程中的氧分压、衬底温度等工艺参数对薄膜结晶结构、元素组分及化学态等材料特性的影响，实现对过渡金属掺杂的TiO2稀磁半导体的组分、结构和氧空位的有效调控；通过改善制备工艺、掺杂以及电场诱导调控磁半导体的室温磁性，实现样品铁磁性的可逆转变, 利用X射线、超导量子干涉等现代分析测试手段对薄膜的组分、结构及电磁性能进行表征，分析样品中磁电阻、自旋输运和反常霍尔效应，得到磁性元素与氧空位的交换耦合规律，进一步认识磁性杂质掺杂形成铁磁序的机理，为稀磁半导体的应用提供理论指导和基础数据。

中文关键词： 稀磁半导体；氧空位；磁性掺杂；室温铁磁性；氧化石墨烯薄膜

英文摘要： Ferromagnetic semiconductor materials is an important spintronics materials，has recently been attracting extensive attention，which is one of the current research focus.This project aims to direct sputtering of magnetic elements doped TiO2 thin films and heterojunction, the systematic analysis of the oxygen partial pressure, substrate temperature, and other process parameters on the material properties of the thin-film crystalline structure, elemental composition and chemical states, effective regulation of the components, structure and oxygen vacancies in the transition metal doped TiO2 diluted magnetic semiconductor; By improving the preparation process, doping and electric field induced regulation of room temperature magnetic semiconductors, to achieve ferromagnetic reversible transition. Film samples were characterized by X-ray diffraction, Superconducting Quantum Interference Device et al modern analytical testing methods, characterization of the composition, structure, and electromagnetic properties of the films，analysis of the magnetoresistance, spin transport and anomalous Hall effect in samples,to obtain the exchange coupling regularity of the magnetic elements with oxygen vacancies, regulated by the concentration of oxygen vacancies in the modulation film magnetic properties of diluted magnetic semicon

英文关键词： Dilute Magnetic Semiconductors；Oxygen vacancies；Magnetic doping；Room temperature ferromagnetism；Graphene oxide film