硅基太赫兹通信集成电路基础理论与关键技术

项目名称： 硅基太赫兹通信集成电路基础理论与关键技术

项目编号： No.61331003

项目类型： 重点项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 王志华

作者单位： 清华大学

项目金额： 260万元

中文摘要： 太赫兹通信具有频带宽、通信速率高、定向传输特性好、干扰少等优点，在家庭多媒体娱乐、宽带接入和军事通信等领域得到了广泛应用。随着硅基工艺的进步，硅基工艺已能支持实现太赫兹通信集成电路，但高达几百GHz的工作频段使太赫兹通信集成电路的实现面临一系列挑战。本项目围绕硅基太赫兹通信集成电路的基础理论与关键技术进行如下方面的研究：硅基太赫兹电磁场统计分析方法、硅基太赫兹元器件与建模技术、硅基太赫兹集成电路原理与设计方法及芯片实现技术、超高数据率通信基带处理与实现技术、硅基太赫兹高增益天线设计方法、硅基太赫兹通信电路的系统架构与原型验证技术。最终采用32nm以下CMOS工艺研制出集成片上天线的太赫兹前端电路芯片和高速通信基带处理芯片，并基于研发的芯片组搭建10Gbps以上数据率的太赫兹通信原型验证系统。该项目致力于解决硅基太赫兹集成电路设计过程中的关键技术问题，为实现实用的太赫兹通信系统奠定良好基础。

中文关键词： 太赫兹器件;硅基集成电路;太赫兹天线;太赫兹器件建模;

英文摘要： THz communication has the advantages of wide bandwidth, high data rate, good directional transmission and little interference, and has been widely used in family multi-media entertainment systems, wideband access and military communications. Along with the developments of Si-based technology, it becomes feasible to implement THz communication ICs in Si technology, but the implementation of Si-based THz communication ICs has a lot of challenges due to several hundreds GHz operation frequency. The project plan to research on basic theory and key techniques of Si-based THz communication ICs, including: statistics Si-based THz EM analysis method; Si-based THz devices and modelling; Si-based THz circuit theory and design techniques as well as chip implementation; Ultra-high data rate communication baseband processing and implementation; Si-based THz high gain antenna techniques; Si-based THz communication system architecture and demo verfication techniques. The goal is to implement THz front-end chip with integrated antenna and high speed communication baseband processing chip in <32nm CMOS technology and build THz communication demo systems with >10Gbps data rate. The project would solve the key techniques of Si-based THz communication IC design and make a good foundation for future THz communication system developments.

英文关键词： THz Devices;Si-Based ICs;THz Antennas;THz Device Modelling