This work is devoted to the development of an efficient and robust technique for accurate capturing of the electric field in multi-material problems. The formulation is based on the finite element method enriched by the introduction of hat-type shape function within the elements crossed by the material interface. The peculiar feature of the proposed method consists in the direct employment of the hat-function that requires solely one additional degree of freedom per cut element for capturing the discontinuity in the electric potential gradient and, thus, the electric field. This additional degree of freedom is subsequently statically condensed element-wise prior to the assembly of the global discrete system. As a consequence, the graph of the system matrix remains the same as that of the standard finite element method. In order to guarantee the robust performance of the proposed method for a wide range of electrical material property ratios, it also accounts for the possible discontinuities among the neighboring cut elements that arise due to employing additional degrees of freedom fully local to the element. The method is tested using several examples solved on structured and unstructured grids. The proposed approach constitutes a basis for enriched FEM applicable to a wide range of electromagnetic problems.
翻译:这项工作致力于开发一种有效、稳健的技术,以便在多物质问题中准确捕捉电场。这种配方是基于在材料界面跨越的元素中引入帽子型形状功能而丰富了的有限元素方法。拟议方法的特征在于直接使用帽子功能,这种功能只需要每切线元素增加一级自由,以捕捉电源梯度和电场的不连续性。这种额外自由程度随后在全球离散系统组装之前静态地压缩元素。因此,系统矩阵图与标准限定元素法的图相同。为了保证拟议方法在广泛的电子材料属性比率方面的有力性能,还考虑到相邻的切线元素之间可能发生的不连续性,因为对电源进行额外自由度的完全本地化。该方法使用若干在结构化和无结构的电网格上解决的示例进行了测试。拟议方法构成了适用于广泛电磁问题的浓缩FEM的基础。