新型P型掺杂1.3微米InAs/GaAs自组织量子点材料生长及激光器应用相关基础研究

项目名称： 新型P型掺杂1.3微米InAs/GaAs自组织量子点材料生长及激光器应用相关基础研究

项目编号： No.60876033

项目类型： 面上项目

立项/批准年度： 2009

项目学科： 金属学与金属工艺

项目作者： 杨涛

作者单位： 中国科学院半导体研究所

项目金额： 40万元

中文摘要： 本项目围绕着如何发展高性能长波长量子点激光器重点开展了1.3微米InAs/GaAs自组织量子点材料生长及激光器应用方面的研究。我们首先建立了高性能1.3微米InAs/GaAs自组织量子点材料生长技术。优化的单层量子点密度达到4.0×10cm-2，对应的尺寸非均匀展宽仅为26.3meV；对于多层量子点结构，荧光强度随层数增加而增加，证明了其高质量。在此基础之上，我们实现了超低阈值电流密度1.3微米InAs/GaAs量子点激光器的室温连续激射。对于有源区由5层量子点构成的激光器，其阈值电流密度低到139A/cm2，对应的每层阈值电流密度仅为27.8A/cm2。进一步，通过引进P型调制掺杂，证明了高特征温度1.3微米量子点激光器，其特征温度高达500K以上。在调制特性方面，我们的1.3微米量子点激光器直接调制速率最高达12Gb/s。此外，首次提出并验证了利用量子点激发态激射可明显增加量子点激光器的调制带宽，为进一步提高量子点激光器的调制速率提供了新途径。项目至今发表论文20篇，申请发明专利5项。项目所得到的结果对于发展未来高速光通信系统所需的低成本、低功耗和高性能关键光源具有重意义。

中文关键词： 量子点；激光器；特征温度；GaAs；InAs

英文摘要： Aiming at developing the high-performance quantum-dot lasers emitting at long wavelengths,we mainly carried out the research on the growth of 1.3um InAs/GaAs self-assembled quantum dots (QDs) and their application to lasers. By the research, we established the growth techneque for high-performance 1.3um InAs/GaAs self-assembled QDs. The optimized density for a single layer of the QDs reaches 4.0 ×010 cm-2, but the size broadening corresponding to the QDs is only about 26.3meV. Furthermore, for multilayer structures of the QDs, photoluminescence intensity increases as the stacking number of the QD layers increases, indicating the high quality of the multilayer QD structures. Based on the above, we realized ultralow threshold current density room-temperature CW lasing of 1.3um InAs/GaAs QD lasers. For a laser whose active region consists of five layers of the QDs, the threshold current density of the laser has been reduced to 139A/cm2, and it corresponding to per layer is only 27.8A/cm2. Moreover, by introducing P-type modulation doping into active region, we demonstrated the 1.3um QD laser with high characteristic temperature greater than 500K. With regard to modulation characteristic, the direct modulation rate of the 1.3um QD lasers we fabricated can reach up to 12Gb/s. In addition, we showed that the modulation band of the QD laser can be significantly increased by using the lasing of excited state of QDs, providing a new way to further improve modulation rate of 1.3um InAs/GaAs QD lasers. The project has so far published 20 papers and filed 5 patent applications. The results obtained by the project have important implications for realizing low-cost, low-power-consumption and high-performance light souces for future high-speed optical communication systems.

英文关键词： quantum dot;laser; To; GaAs; InAs