高存储密度多铁隧道结的制备与物性研究

项目名称： 高存储密度多铁隧道结的制备与物性研究

项目编号： No.51502129

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 一般工业技术

项目作者： 刘愉快

作者单位： 南方科技大学

项目金额： 20万元

中文摘要： 随着人们对器件小型化、多功能化的需求越来越高，传统电子器件尺寸已经接近了量子极限，因而尺寸的进一步降低变得越来越困难。在保证器件尺寸不变的情况下，一种有效的解决办法就是采用多功能材料提供新颖的物理现象和功能，从而使得计算机能力和存储密度增加等。而多铁隧道结集成了铁磁隧道结和铁电隧道结的优势，它可以在一个存储单元上实现四个非易失的电阻态，从而大大增加了信息的存储密度。本课题将研究多铁隧道结的设计、制备工艺以及物性调控；探索多铁隧道结的生长技术、工艺和机理，关注应变、界面以及畴工程等手段对多铁多层膜的结构和物性的影响；探索界面处自旋轨道耦合作用和磁电耦合效应；研究电、磁、光等多场下多铁隧道结的性能调控，并设计相应的存储原型器件。

中文关键词： 多铁隧道结；多态存储；磁电耦合；应变；畴工程

英文摘要： As for the trends toward device miniaturization and multi-functionalization, the conventional electronic element size is approaching quantum limits beyond which the reduction is becoming more and more difficult. One way to continue the current trends in computer power and storage increase, is to use multifunctional materials that would bring out novel physical phenomena and enable new device capabilities. A mechanism to increase the number of memory states was proposed by using a ferroelectric material as tunnel barrier in magnetic tunneling junction, making the device into a multiferroic tunnel junction (MFTJ), which exhibits four non-volatile resistance states in a single memory unit cell. In this project, we will emphatically design, fabricate and investigate the MFTJs. We will intend to explore the growth techniques of the MFTJs, concern the effects of strain, interface and domain engineering on the growth and physical properties of thin films. We will pay more attention on the spin-orbit coupling and interface-magnetoelectric effects. We will manipulate of the physical properties of the devices through electric, magnetic, and light fields, etc；and then design relevant physical effects of multi-state memory devies.

英文关键词： multiferroic tunnel junction;multi-state memory;magnetoelectric coupling;strain and domain engineering