Fe,Sn掺杂In2O3薄膜室温铁磁性的电场调控

项目名称： Fe,Sn掺杂In2O3薄膜室温铁磁性的电场调控

项目编号： No.61204097

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 江凤仙

作者单位： 山西师范大学

项目金额： 26万元

中文摘要： 采用脉冲激光沉积和激光分子束外延技术，以Fe/Sn为非补偿性p-n对，通过优化实验方案，制备出由Fe和Sn取代In的均相In2O3薄膜。设计"金属-绝缘体-半导体"结构单元，在外加电场下，测量其霍尔效应、霍尔电阻随外磁场的变化曲线以及磁滞回线。研究外加电场对Fe,Sn掺杂In2O3薄膜的载流子浓度、霍尔迁移率、反常霍尔电导率、磁化强度和居里温度的影响；选择不同介电常数的绝缘层材料，研究其对外加电压的影响。在较小的外加电压下实现对Fe,Sn掺杂In2O3薄膜室温磁性"开"与"关"的电场调控。该项目的研究将为氧化物稀磁半导体在未来自旋电子器件的应用提供一定的实验依据。

中文关键词： 氧化物稀磁半导体；非补偿p-n共掺杂；脉冲激光沉积技术；铁磁性；

英文摘要： Fe,Sn doped In2O3 films will be prepared by pulsed laser deposition (PLD) and laser molecular beam epitaxy (L-MBE) techniques. By optimizing the experimental parameters and techniques,the noncompensated p-n pairs of Fe-Sn will be used to obtain the almost homogeneous films, in which the Fe and Sn both incorporate into the indium oxide lattice by substituting the position of indium atoms. By applying external electric fields on a metal-insulator-semiconductor structure, the Hall effect, the magnetic-field dependence of Hall resistance and the hysteresis loops of the Fe,Sn doped In2O3 films will be measured. We will investigate the effect of the gate voltage on the carrier density, mobility, anomalous Hall conductivity, magnetization and Curie temperature of the films. The different insulator materials will be choosed to study their influences on the gate voltage. The room temperature ferromagnetism of Fe,Sn doped In2O3 films will be turned "On" and "Off" by the external electric fields. The results to be obtained from this proposal will be very helpful for future application of oxide diluted magnetic semiconductors in spintronics devices.

英文关键词： oxide-based diluted magnetic semiconductos；the noncompensated p-n codoping；pulsed laser deposition；ferromagnetism；