石墨烯/六方氮化硼面内拼接超晶格结构的可控制备及物性研究

项目名称： 石墨烯/六方氮化硼面内拼接超晶格结构的可控制备及物性研究

项目编号： No.61574170

项目类型： 面上项目

立项/批准年度： 2016

项目学科： 无线电电子学、电信技术

项目作者： 肖文德

作者单位： 中国科学院物理研究所

项目金额： 16万元

中文摘要： 本项目致力于发展一套有效的方法，实现石墨烯/六方氮化硼面内拼接超晶格结构的可控制备，优化石墨烯纳米带的能带调控工程，为将来基于石墨烯的微电子学、光电子学器件开发和应用开辟道路。为此，我们拟基于“自下而上”方法，采用两步法制备石墨烯/六方氮化硼面内拼接超晶格结构。我们将在超高真空环境下，首先利用高指数金属单晶表面作为模板，诱导石墨烯前驱物分子在模板表面生长石墨烯纳米带有序阵列；然后在石墨烯纳米带之间生长六方氮化硼，使其与石墨烯纳米带在面内拼接成一个完整的单原子层厚的薄膜，从而获得石墨烯/六方氮化硼面内拼接超晶格结构，并利用扫描隧道显微镜原位研究其微观结构和电学、磁学特性。

中文关键词： 石墨烯；六方氮化硼；异质结构；扫描隧道显微镜；

英文摘要： Graphene nanoribbons (GNRs), the quasi-one-dimensional strips of graphene, have attracted tremendous attention, due to their tunable band gap, which is crucial for future graphene-base electronics. Here, we propose to synthesize in-plane graphene-hexagnoal boron nitride (G-hBN) superlattice, which is expected to fulfill the requirements of both band structure engineering of graphene and scalable device fabrication. We plan to prepare in-plane G-hBN superlattice via a two-step “bottom-up” approach. In a first step, the precursor molecules of graphene will react with each other and form GNRs after deposition on clean high-index metal single-crystal surface and with sample heating in ultrahigh vacuum. These GNRs are expected to locate at the step edges of the substrate and exhibit long-range order. In a second step, hBN will be grown in between GNRs via deposition of precursor molecules consisting of B and N atoms. The seamless linking of hBN and GNRs will finally result in the formation of in-plane G-hBN superlattice. The structure, edge geometry, doping, electronic and magnetic properties of in-plane G-hBN superlattice will be studied by means of low temperature scanning tunneling microscopy. The success in fabrication of the proposed in-plane G-hBN superlattice will pave the way for application of graphene in fu

英文关键词： graphene；hexagonal boron nitride；heterostructure；scanning tunneling microsocpy；