具有衬底反型电荷区的硅基横向超结DMOST研究

项目名称： 具有衬底反型电荷区的硅基横向超结DMOST研究

项目编号： No.61274080

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 成建兵

作者单位： 南京邮电大学

项目金额： 82万元

中文摘要： 针对横向超结DMOST中存在的衬底辅助耗尽效应，本项目提出基于硅基衬底的电场调制型横向超结DMOST新结构。本项目拟在衬底引入反型电荷层，通过提高衬底承担的纵向电压，以降低超结区承担的纵向电压，从而消除衬底辅助耗尽效应。在系统研究新结构存在的体内场调制机理以及寄生效应的基础上，采用解三维泊松方程以及模拟与实验相结合的方法，阐明三维体内场优化机理，建立击穿电压模型、比导通电阻模型以及可靠性相关模型（包含安全工作区、三维温度分布模型和Kirk效应模型）。本项目还将探索包括衬底反型电荷层形成在内的关键工艺技术，提出兼容于标准BCD工艺的新结构工艺流程，制造出600V耐压级高性能的横向超结DMOST新结构，进而设计出单位长度耐压高、比导通电阻低的900V级横向超结功率器件新结构。本项目的立项将为设计电源管理芯片所需高耐压、高可靠性、低成本、低功耗的横向功率器件设计提供思路。

中文关键词： 横向超结DMOST；高低端LDMOST；横向IGBT；选择型埋层；纵向结终端技术

英文摘要： To eliminate the substrate-assisted-depletion effect in the lateral superjunction doubled-diffusion MOSFET (DMOST, SJ-LDMOST), a series of new bulk silicon SJ-LDMOSTs based on electric field modulation are proposed in this project. The new substrate with reversed charges will be used in designing the SJ-LDMOSTs. After detailedly researching on the bulk field modulation and the parasitic effect in the new structures, the 3-dimention mechanism of bulk field modulation will be set forth. Also, the breakdown voltagethe model, the specific on-resistance model and the reliability models (mainly including safe operation area model, 3-dimention temperature distribution model and kirk effect model) will be founded. To fabricate the new structures, key process techniques included forming the reverse-charge-layer will be invented and 600V breakdown-voltage class new structures with high performance will be fabricated. Futhermore, new 900V-class SJ-LDMOTTs with high breakdown voltage per drift region length and low specific on-resistance will be designed. After the project establishment, the substrate-assisted-depletion effect in the novel SJ-LDMOST will be eliminated, which will help to design the lateral power devices featured as high breakdown voltage, high reliabiligy, low cost and low power dissipation for smart power

英文关键词： SJ-LDMOST；High- and Low-side LDMOST；LIGBT；Selective Buried-layer；Vertical Junction Termination Technique