氮化镓基交流LED在交流应力下的老化机理研究

项目名称： 氮化镓基交流LED在交流应力下的老化机理研究

项目编号： No.61306053

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 郭金霞

作者单位： 中国科学院半导体研究所

项目金额： 31万元

中文摘要： AC-LED是GaN基LED很有应用前景的一个研究方向，但是AC-LED面临芯片利用率低且易失效的问题，然而目前对于LED在交流电压应力失效机理的研究几乎是空白。本项目研究在交流应力下GaN基LED的失效机理。首先，在高压LED（HV-LED）基础上研究GaN基LED中载流子和缺陷在交变电场的产生、扩展和运动机制，对比研究HV-LED在交变电压下与恒定等效电压下的失效机理的差异；研究惠斯通桥路交流LED（WB-ACLED）在交流下的发光机理和失效原因，找出WB-ACLED失效与其外延结构、芯片工艺和电路结构的关系；最后，通过研究外延生长条件、优化芯片制造工艺和结构设计以及WB-ACLED整流支路和负载支路上微LED数量的最佳比例，研制芯片利用率在80%以上和寿命接近DC-LED寿命的WB-ACLED芯片。此外，通过研究AC-LED的失效机理，建立AC-LED的老化测试方法和失效评价标准。

中文关键词： 高压LED；发光二极管；交流LED；；

英文摘要： AC-LED is a prospective research field for GaN-based LED application,but there are some serious problems in ACLED,such as low chip area utilization rate and short lifetime.However,few researches were conducted on degradation mechanism of ACLED.In this proposal, degradation mechanism of GaN-based LED under AC stress is studied. Firstly, we investigate generation, development and movement of carriers and defects in GaN-based HV-LED under alternating electrical field ,and find out difference of degradation process in HV-LED between under alternating voltage stress and under constant equivelent voltage.Subsequently,we will reseach on luminescence mechanism and failure mode of Wheatstone-bridge ACLED under AC power,to analyze effect of epilayer structure,chip process and circuit structure on failure mode.Finally,through optimizing epitaxy process,chip process and number of micro-LEDs in rectify branches of WB-ACLED, WB-ACLED chip with longer lifetime comparable to that of DC-LED and chip area utilization rate more than 80% will be manufactured. After research on failure mode of ACLED，degradation testing method and criteria for evaluation of failure of ACLED will be established.

英文关键词： HV-LED；LED；Alternating Current LED；；