离子束精确掺杂单根CdS纳米带制备及原位性能研究

项目名称： 离子束精确掺杂单根CdS纳米带制备及原位性能研究

项目编号： No.11305056

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 数理科学和化学

项目作者： 徐进霞

作者单位： 湖北工业大学

项目金额： 28万元

中文摘要： 半导体纳米材料的合成方法、形貌结构以及物理性能的研究是实现纳米光电器件的基元和应用的基础。针对国内外掺杂CdS纳米带的制备和性能研究发展现状，结合本课题组在纳米半导体材料制备及离子注入方法进行改性的研究进展。本项目提出了开展离子束精确掺杂单根CdS纳米带的制备及原位光电性能研究。通过热蒸发方法生长硫化镉纳米带，利用光刻技术实现硫化镉纳米带的标定并结合离子注入方法实现对单根CdS纳米带的金属离子和非金属离子有效掺杂并原位研究其光电性能。通过金属和非金属掺杂对CdS纳米带能带结构进行调控，研究掺杂后载流子输运以及辐射与非辐射复合的物理过程。重点研究离子束精确掺杂单根纳米带及其原位性能。探索和掌握材料的微观结构、掺杂浓度、掺杂类型与光电性能之间的本质关系。初步设计和构建单根CdS纳电子器件。探索纳米制造理论及工艺与器件的性能演变规律。从而为CdS纳米带在纳米光电器件中的应用奠定坚实的基础。

中文关键词： 纳米线；离子注入；聚焦离子束；原位性能；

英文摘要： Low-dimensional semiconductor nanostructures have emerged as ideal building blocks in various powerful nano-devices due to their superior optical, physical and electrical properties over traditional thin film and bulk materials. Cadmium sulfide(CdS), as an important II-VI semiconductor with a wide direct band-gap of 2.42 eV at room temperature, is of particular interest as it can function as important building blocks for wide-ranging nano-electronic and nano-optoelectronic devices. Undoubtedly, the operation of the CdS based nano-devices relies on the density of free charge carriers available in the semiconductor nanostructures. In general, the modulation of the electrical properties is achieved by doping method. Thus, a number of publications concerning CdS nanostructure doped with various types of impurities have been reported in recent years like Mo，Fe，P，Ag，N，Ga ions by various technologies such as in situ doping during vapor liquid solid growth,diffusion, and low energy ion implantation.Doping by ion implantation is a widely employed technique in the semiconductor industry as it allows precise control of doping level and profile.Ion implantation single CdS nanobelts have been researched seldom so far. From this perspective, the project will focus on single nanobelt precise doping by ion implantation combined

英文关键词： nanowire；ion implantation；focused ion beam；in situ property；