SnO2 纳米棒阵列的可控化制备及其在太阳能电池应用中的研究

项目名称： SnO2 纳米棒阵列的可控化制备及其在太阳能电池应用中的研究

项目编号： No.61504002

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 无线电电子学、电信技术

项目作者： 周晓明

作者单位： 北华大学

项目金额： 18万元

中文摘要： 借助于一维结构和纳米棒阵列独特的优势，结合半导体异质结对载流子较高的分离效率，量子点敏化太阳能电池成为现今研究的热点。而改善太阳能电池的结构，可以有效的提高电池的光电转换效率，特别是致密层(阻挡层)的引入，在界面电荷传输方面，有效的减少了电解质与衬底界面间逆电流的发生，对于提高电池的光电转换效率有着重要的意义。本项目拟采用低温热蒸发法制备出部分属性可控的SnO2纳米棒阵列: 1) 对薄型致密的SnO2纳米棒阵列开展作为太阳能电池致密层(阻挡层)的研究，探寻SnO2致密层的引入及致密层的厚度和生长取向对量子点敏化TiO2(ZnO)太阳能电池整体光电性能的影响，探究SnO2致密层与TiO2(ZnO)主体层界面电荷的传输机制。2) 对适当长度、分散性较好的SnO2纳米棒阵列开展与其能带匹配，且可形成Ⅱ型异质结的量子点敏化太阳能电池光电性能的研究。对窄禁带半导体量子点光吸收层的厚度和组成进行优化。

中文关键词： 二氧化锡；纳米棒阵列；阻挡层；Ⅱ型异质结；量子点敏化太阳能电池

英文摘要： Nowadays, quantum dots sensitized solar cells become a hot research topic, by means of one-dimensional structure of nanorod arrays with unique advantages, and combined with the carrier of high separation efficiency for semiconductor heterojunction. Moreover, improving the structure of the solar cell, can effectively enhance the photoelectric conversion efficiency of the cells, especially the introduction of dense layer (barrier layer), which effectively reducing the occurrence of reverse current between the electrolyte and the substrate interface in terms of interface charge transfer. The project target is planned to prepare nanorod arrays of various properties controlled by low-temperature thermal evaporation approach. 1) To research into thin dense SnO2 nanorod arrays as the dense layer (barrier layer) for the solar cells, the influence of the introduction of SnO2 dense layer will be explored. The thickness and the growth orientation of the dense layer effect on the photovoltaic performance of quantum dots sensitized TiO2 (ZnO) solar cells will also be discuss in the study. The transmission mechanism of interface charge between the SnO2 dense layer and the TiO2 (ZnO) layer will be investigated. 2) For the photoelectric performance research of the appropriate length and good dispersion SnO2 nanorod arrays solar cells by the semiconductor quantum dots sensitized, which can formⅡ-type heterojunction structure with the SnO2 semiconductor. The thickness and composition of narrow band gap semiconductor quantum dots absorption layer will be optimized.

英文关键词： SnO2; nanorod arrays;barrier layer;Ⅱ-type heterojunction;quantum-dot-sensitized solar cells