基于量子点/非晶杂化结构的SnO2薄膜紫外光电应用研究

项目名称： 基于量子点/非晶杂化结构的SnO2薄膜紫外光电应用研究

项目编号： No.61205038

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 邓蕊

作者单位： 长春理工大学

项目金额： 28万元

中文摘要： 二氧化锡（SnO2）是直接宽禁带半导体，带隙处于紫外区，其单晶导带底和价带顶的对称性决定了带边跃迁是禁戒的，限制了它在紫外光电领域的应用。不过，最近的研究表明，具有纳米结构的SnO2能够打破带边禁戒跃迁的限制，并实现紫外发光。本项目将制备包埋于非晶薄膜之中的SnO2量子点（即量子点/非晶杂化结构SnO2薄膜），以期实现高效的紫外发光。主要研究：杂化组分对薄膜光谱结构、发光强度及发光动力学影响的规律和物理机制；探寻打破偶极禁戒跃迁、实现紫外发光的有效方法；获得控制量子点尺寸与分布的技术手段；开展杂化薄膜掺杂特性研究，探索量子点中引入受主杂质In后的光谱结构、发光强度及发光动力学规律；设计和制备pn或pin异质结构的紫外发光二极管，并研究发光二极管结构对紫外发光性能的影响。本项目的研究对于深入理解SnO2量子点紫外发光动力学机制和开发SnO2薄膜紫外光电器件具有十分重要的意义。

中文关键词： 二氧化锡；紫外光发射；异质结；发光二极管；

英文摘要： Tin dioxide (SnO2) is a wide direct bandgap semiconductor and its bandgap is in the ultraviolet (UV) region. However, it is commonly believed that SnO2 is not a suitable UV light emitter due to the dipole-forbidden nature of its band-edge quantum states. The even-parity symmetry of the conduction-band minimum (CBM) and valence-band maximum (VBM) states in SnO2 prohibits the band-edge radiative transition and light emission, which limits its potential in optical applications such as photodiodes and light-emitting diodes (LEDs). Recent research indicates that nanostructural SnO2 can break dipole-forbidden rule and realize UV light emission. In this project, we will fabricate SnO2 thin films based on quantum-dot/amorphous hybrid structure for application in UV optoelectronic field. Research content includes: (i)explore physical mechanism of effect of hybrid component on UV spectra, intensity and dynamics of UV light emission;(ii)obtain an effective method to break dipole-forbidden rule and recover the UV optical activity; (iii)develop a technology to control size and distribution of quantum dots and modulate UV luminescent properties;(iv)study doping effect in hybrid SnO2 films, such as spectral structure of luminescence,intensity and dynamics of UV light emission as acceptor indium doped into SnO2 quantum-dots;(v)

英文关键词： SnO2；UV Light-Emitting；Heterojunction；Light-Emitting Diode；