太赫兹频段InP基HEMT器件模型研究

项目名称： 太赫兹频段InP基HEMT器件模型研究

项目编号： No.61275107

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 吕昕

作者单位： 北京理工大学

项目金额： 80万元

中文摘要： 本课题拟解决的三个科学问题分别为：InP基HEMT材料生长动力学与迁移率控制、太赫兹频段纳米尺度下载流子的输运机理以及太赫兹InP基HEMT器件的建模方法。通过对InP基HEMT材料原子级外延生长动力学的研究，实现对InP基材料缺陷、掺杂和界面等关键参数的原子级调控，为外延生长和外延结构设计提供理论依据；研究掺杂方式和掺杂行为对载流子迁移率的影响，研究多种散射的机理，提高载流子的迁移率；研究InP基HEMT器件中载流子的输运机理和短沟道效应，从能带角度研究解决InP基HEMT频率特性与击穿电压之间的矛盾；研究并探索InP基HEMT器件的等比例缩小规律，为实现其在更高频率上的应用提供理论指导；在此基础上，将蒙特卡罗模拟与电磁场全波求解结合，探索太赫兹频段InP基HEMT器件的建模方法，并通过相关工艺进行器件模型验证和测试。

中文关键词： 太赫兹波；InP赝配高电子迁移率晶体管；等效电路模型；单片集成放大电路；在片校准和测试

英文摘要： In this subject, three scientific problems will be solved: growth dynamics of InP based HEMT material and control of the mobility, transport mechanism of carriers on the nanoscale and the modeling method for InP based HEMT in terahertz band. It will be realized that Atomic level control of the InP based material's key parameters such as defects, doping and interface by researching the material's epitaxy growth kinetics, and it will provide theoretical basis for epitaxy growth and design. It will be researched that the effect of doping method and doping behavior on carriers mobility, and a variety of scattering mechanism will be discussed for improving the mobility of the carriers. The conflict between frequency characteristics and breakdown voltage of InP based HEMT will be solved by study on the transport mechanism and short channel effect of carriers. The law of scale down will provide theoretical basis for the application of InP based HEMT in higher frequency. By combining Montecarlo Simulation and full-wave analysis, the model of InP based HEMT in terahertz band will be established,and in order to prove the validity of the approach, semiconductor technology concerned will be discussed.

英文关键词： Terahertz-wave；InP PHEMT；equivalent circuit model；MMIC amplifier；on-wafer calibration and measurement