光诱导半导体纳米结构的输运特性研究

项目名称： 光诱导半导体纳米结构的输运特性研究

项目编号： No.10874040

项目类型： 面上项目

立项/批准年度： 2009

项目学科： 轻工业、手工业

项目作者： 杜祖亮

作者单位： 河南大学

项目金额： 42万元

中文摘要： 本项目主要研究了氧化物纳米线肖特基势垒、氧化物半导体复合结构、量子体系的光电输运特性。在纳米线肖特基势垒方面，发展了电化学沉积调控纳米线表面态的方法，实现了对CuO纳米线肖特基势垒的有效调控；提出了纳米线肖特基势垒的二维势垒结构模型，解释了ZnO纳米线肖特基势垒光电二极管的不饱和光电流特性；利用紫外光对WO3纳米线表面吸附氧的调控，实现了对纳米线肖特基势垒的势垒高度和传输特性的有效调控；利用ZnO纳米线肖特基势垒发展了具有超高灵敏度和快速恢复速度的高性能紫外光传感器。在氧化物复合结构方面，研究了ZnO纳米线阵列与poly(3-hexylthiophene)分子复合结构表界面的光电荷分离和传输特性；利用瞬态光电压技术研究了WO3-TiO2纳米颗粒薄膜分层异质结构的动态光电分离过程；研究了TiO2-ZnO纳米线阵列复合异质结构的光电分离特性和短路光电流的快速开关特性。在量子体系方面，利用水热合成、LB膜诱导生长等方法制备了直径小于20纳米和6纳米的ZnO、CdS超细纳米线；利用LB技术构筑了C60-CdS量子点复合体系，研究了光照下的跨膜光电荷转移特性。

中文关键词： 氧化物纳米线肖特基势垒；半导体异质结构；量子点；光电输运特性

英文摘要： In this project, the optoelectric transport properties of oxide nanowire Schottky barrier (SB), oxide-based compound, and quantum system have been investigated. In part one, the barrier height of CuO nanowire SB has been controlled by electrochemical deposition method; the 2-D barrier model has been developed to explain the unsaturated photocurrent of ZnO nanowire SB; the barrier height of WO3 nanowire SB has been controlled by desorption of O2 induced by UV light; the UV photodetector of ZnO nanowire SB with ultrahigh sensitivity and fast recovery speed has been developed. In part two, the separation and transport behaviors of photo-induced charges in the interface of ZnO nanowire array/poly(3-hexylthiophene) have been investigated; the dynamic separation process of the photo-induced charges of WO3-TiO2 nanoparticles film compound has been investigated by transient photovoltage spectra method; the charge separation and fast switches of photocurrent of TiO2-ZnO nanowire array compound have been investigated. In part three, the ultrathin nanowires of ZnO and CdS have been prepared by hydrothermal and LB film methods; the cross-film transfer properties of photo-induced charges in C60-CdS quantum dots compound have been investigated.

英文关键词： oxide nanowire Schottky barrier; oxide-based compound;quantum dot;optoelectric transport properties;