MOCVD生长InAs/GaSbII类超晶格中界面形成动力学及其对超晶格性能的影响

项目名称： MOCVD生长InAs/GaSbII类超晶格中界面形成动力学及其对超晶格性能的影响

项目编号： No.11274301

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 数理科学和化学

项目作者： 刘舒曼

作者单位： 中国科学院半导体研究所

项目金额： 95万元

中文摘要： InAs/GaSb II类超晶格特殊的能带结构使基于该材料的红外探测器具有量子效率高、暗电流小、工作温度高等潜在优势，目前高质量的材料和高性能的器件大多依托于MBE技术，与之相比，MOCVD生长InAs/GaSb II类超晶格还存在许多机理上的问题，尤其是对界面形成动力学过程及其调控机理还没有深入理解，这是目前MOCVD生长II类超晶格的瓶颈。本项目提出一种新型的界面和形成方式，从外延表面初态入手，研究成核特点以及界面的形成机理，利用拉曼、FTIR光谱、高分辨TEM、XRD以及光电测试等手段研究界面的精细结构、超晶格的应变状态、材料的质量和光电性能，从而探索MOCVD外延中界面形成的可控性，阐明界面调控与超晶格材料中应变平衡以及材料光电性能之间的内在联系，由此设计界面结构，既能适应MOCVD生长特性，又能对超晶格实现应变补偿，最终建立II类超晶格MOCVD生长总体过程的物理模型。

中文关键词： MOCVD；InAs/GaSb超晶格；InAs/InAsSb超晶格；红外光谱；

英文摘要： The InAs/GaSb type-II superlattices(SLs) have the advantages of high quantum efficiency, low dark current and high operation temperature due to their special broken-gap type-II band alignment. So far, high-quality InAs/GaSb SL materials used for IR photodetectors have mostly been grown by MBE. However, the growth of InAs/GaSb SLs with high crystalline quality and good optical properties by MOCVD remains a great challenge, especially the formation mechanism of suitable interfaces has not been clarified. This proposed research is in the area of MOCVD growth of InAs/GaSb type-II SLs. The main focus of the proposed research is the MOCVD growth mechanism, especially the formation of controllable interfaces that can compensate the tensile strain between the SLs and the substrates. A novel type interfaces and a new way for the formation of such interfaces are suggested in this proposed research. The proposed research will be started from the initial state of the growth surface and the nucleation of the epitaxial layer. Then the formation mechanism of the SL interfaces will be studied.The properties of the MOCVD grown SL materials with the novel interfaces will be determined by Raman spectroscopy, Fourier-transform infrared absorption, photoluminescence spectroscopy, high-resolution TEM and XRD characterization, and opt

英文关键词： MOCVD；InAs/GaSb superlattice；InAs/InAsSb superlattice；infrared spectrum；