Co2MnSi/L10-MnGa磁性双层膜的垂直磁各向异性及自旋极化度

项目名称： Co2MnSi/L10-MnGa磁性双层膜的垂直磁各向异性及自旋极化度

项目编号： No.11304307

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 数理科学和化学

项目作者： 鲁军

作者单位： 中国科学院半导体研究所

项目金额： 30万元

中文摘要： 以MgO为势垒层的Co(Fe)/MgO结构具有极高的自旋注入效率，铁磁层?1能带的半金属性及与MgO完美的外延是出现这一效应的关键因素。探索具有这一特性并兼有垂直磁各向异性及高自旋极化度的半金属材料成为目前自旋电子学材料研究的焦点之一。这类材料在进一步缩小自旋电子学器件尺寸、减小电流诱导磁化翻转的临界电流密度等方面有重要应用。磁性多层膜的人工结构在开发这类功能材料上有更大的自由度。传统 [Co/Pt、Pd、Ni]n多层膜与稀土/过渡金属合金（贵金属合金）/CoFe双层膜结构在材料的制备和性能上还不能满足器件设计的全部要求。本项目拟研究具有高垂直磁各向异性的L10-MnGa与具有高自旋极化度的半金属Co2MnSi组成的磁性双层膜的迁移增强分子束外延生长、垂直磁化特性以及自旋极化度，弄清影响此磁性双层膜垂直磁各向异性及自旋极化度的关键因素及其物理机制，为开发多功能的自旋电子学器件材料提供基础。

中文关键词： 磁性隧道结；垂直磁各向异性；；；

英文摘要： MgO barrier based Co(Fe)/MgO structure exhibits high spin-injection efficiency. The half metallicity of ?1 band of magnetic layer, and well epitaxial relationship with MgO are the two key factors for this effect. Research on this kind of materials, which also have perpendicularly magnetic anisotropy and high spin polarization, like perpendicular magnetized Heusler alloys, is a hotspot in spintronics recently. These materials have important potential applications in scaling down the size of spintronic devices and lowering the critical current density of current-induced magnetization switching. Magnetic multilayer architecture is a more flexible way to design this kind of functional material. The traditional [Co/Pt、Pd、Ni]n multilayers and rare-earth/transition-metal alloy(noble-metal alloy)/CoFe bilayers still can not meet all the requirements for spintronic device with high performance. A novel bilayer structure is suggested in this proposal, which consists of perpendicularly magnetized L10-MnGa layer and high spin polarized Heusler alloy Co2MnSi. A reasonable fabrication process is proposed, in which migration enhanced molecular beam epitaxy is the key point. Furthermore, the important factors and mechanisms influencing the perpendicular magnetic anisotropy and spin polarization of this bilayer will be studied,

英文关键词： magnetic tunnel junction；perpendicular magnetic anisotropy；；；